DataSheet26.com

NTE2520 PDF даташит

Спецификация NTE2520 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Complementary Transistors».

Детали детали

Номер произв NTE2520
Описание Silicon Complementary Transistors
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE2520 Даташит, Описание, Даташиты
NTE2519 (NPN) & NTE2520 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D High Breakdown Voltage
D Large Current Capacity
D Isolated Package
Applications:
D Color TV Audio Output
D Converters
D Inverters
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 120V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 100mA
VCE = 5V, IC = 10mA
VCE = 10V, IC = 50mA
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
140 – 400
90 – –
– 120 – MHz









No Preview Available !

NTE2520 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2519
NTE2520
Cob VCB = 10V, f = 1MHz
14 pF
22 pF
Collector to Emitter Saturation Voltage
NTE2519
NTE2520
VCE(sat) IC = 500mA, IB = 50mA
0.13 0.45 V
0.2 0.5 V
Base to Emitter Saturation Voltage
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Rise Time
Storage Time
NTE2519
NTE2520
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
IC = 500mA, IB = 50mA
IC = 10µA, IE = 0
IC = 1mA, RBE =
IE = 10µA, IC = 0
IC = 10A, IB1 = 10A,
IB2 = 700mA, Note 1
0.85 1.2
180 – –
160 – –
6––
0.04
V
V
V
V
µs
1.2 µs
0.7 µs
Fall Time
NTE2519
NTE2520
tf
0.08
0.04
µs
µs
Note 1. Pulse Width = 20µs, Duty Cycle 1%.
.315 (8.0)
.130
(3.3)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.610
(15.5)
.094 (2.4)










Скачать PDF:

[ NTE2520.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE252Silicon Complementary TransistorsNTE
NTE
NTE2520Silicon Complementary TransistorsNTE
NTE
NTE2521Silicon NPN Transistor Video Output for HDTVNTE
NTE
NTE2522Silicon Complementary Transistors High Speed SwitchNTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск