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NTE2529 PDF даташит

Спецификация NTE2529 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Complementary Transistors».

Детали детали

Номер произв NTE2529
Описание Silicon Complementary Transistors
Производители NTE
логотип NTE логотип 

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NTE2529 Даташит, Описание, Даташиты
NTE2528 (NPN) & NTE2529 (PNP)
Silicon Complementary Transistors
High Voltage Switch
Features:
D High Voltage and High Current Capacity
D Fast Switching Time
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain–Bandwidth Product
Output Capacitance
NTE2528
ICBO
IEBO
hFE
fT
Cob
VCB = 120V, IE = 0
VEB = 4V, IC = 0
VCE = 5V, IC = 100mA
VCE = 5V, IC = 10A
VCE = 10V, IC = 50mA
VCB = 10V, f = 1MHz
NTE2529
Collector–Emitter Saturation Voltage
NTE2528
NTE2529
VCE(sat)
IC = 500mA, IB = 50mA
Min Typ Max Unit
– – 1.0 µA
– – 1.0 µA
100 – 400
80 – –
– 120 – MHz
– 12 – pF
– 22 – pF
– 0.13 0.5 V
– 0.2 0.45 V









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NTE2529 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BaseEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
TurnOn Time
Storage Time
NTE2528
NTE2529
VBE(sat) IC = 500mA, IB = 50mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
ton VCC = 100V, VBE = 5V,
tstg
10IB1 = 10IB2 = IC = 700mA,
Pulse Width = 20µs,
Duty Cycle 1%, Note 1
180
160
6
0.85
60
1.2
0.7
1.2
V
V
V
V
ns
ns
ns
Fall Time
NTE2528
tf
80 ns
NTE2529
50 ns
Note 1. For NTE2529, the polarity is reversed.
.256 (6.5)
.197 (5.0)
.090 (2.3)
.059 (1.5)
.275
(7.0)
BCE
.295
(7.5)
.090 (2.3)
.002 (0.5)
.002(0.5)










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