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NTE155 PDF даташит

Спецификация NTE155 изготовлена ​​​​«NTE» и имеет функцию, называемую «Germanium Complementary Transistors».

Детали детали

Номер произв NTE155
Описание Germanium Complementary Transistors
Производители NTE
логотип NTE логотип 

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NTE155 Даташит, Описание, Даташиты
NTE131 (PNP) & NTE155 (NPN)
Germanium Complementary Transistors
Audio Power Amplifier
Description:
The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese
TO66 type package designed for use in audio power amplifier applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +90°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +90°C
Note 1. NTE131MP is a matched pair of NTE131 with their DC Current Gain (hFE) matched to within
10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Common–Emitter Cutoff Frequency
Base–Emitter ON Voltage
Collector–Emitter Saturation Voltage
ICEV
IEBO
hFE1
hFE2
fαe
VBE
VCE(sat)
VCE = 32V, VEB = 1V
VEB = 10V, IC = 0
VCB = 0, IE = 100mA
VCB = 0, IE = 1A
VCB = 2V, IE = 100mA
VCB = 0, IE = 1A
IC = 1A, IB = 100mA
Min Typ Max Unit
– – 1 mA
– – 1 mA
35 – 170
36 – 185
10 15 – kHz
– 0.4 – V
– 0.08 – V









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NTE155 Даташит, Описание, Даташиты
.593 (15.08)
Dia
.290 (7.36)
.031
(.792)
.039 (1.0) Dia
.944 (24.0)
.530 (13.5)
.157 (4.0)
Dia
(2 Places)
.295 (7.5)
Base
.315
(8.0)
Collector/Case
Emitter










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