NTE2381 PDF даташит
Спецификация NTE2381 изготовлена «NTE» и имеет функцию, называемую «Complementary Silicon Gate MOSFETs». |
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Детали детали
Номер произв | NTE2381 |
Описание | Complementary Silicon Gate MOSFETs |
Производители | NTE |
логотип |
3 Pages
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NTE2380 (N–Ch) & NTE2381 (P–Ch)
Complementary Silicon Gate MOSFETs
Enhancement Mode, High Speed Switch
Description:
The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type
package designed for high voltage, high speed power switching applications such as switching regu-
lators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximim Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain–Gate Voltage (RGS = 1MΩ), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
Pulsed
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +25°C), PD
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C
Operating Temperature Range, Topr
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Case, RthJC
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275°C
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
NTE2380
NTE2381
V(BR)DSS VGS = 0, ID = 0.25mA
IDSS
VDS = 500V, VGS = 0
500 – – V
– – 0.25 mA
– – 0.2 mA
NTE2380 & NTE2381
Gate–Body Leakage Current, Forward
NTE2380
NTE2381
IGSSF
VDS = 400V, VGS = 0, TJ = +125°C
VGSF = 20V, VDS = 0
–
–
–
– 1.0 mA
– 500 nA
– 100 nA
Gate–Body Leakage Current, Reverse
NTE2380
NTE2381
IGSSR
VGSF = 20V, VDS = 0
– – 500 nA
– – 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage
NTE2380
NTE2381
Static Drain–Source On–Resistance
NTE2380
NTE2381
Forward Transconductance
NTE2380
NTE2381
Dynamic Characteristics
VGS(th)
rDS(on)
VDS = VGS
ID = 0.25mA
ID = 1mA
VGS = 10V, ID = 1A
gFS
ID = 1A
VDS ≥ 7.5V
VDS = 15V
2.0 – 4.0 V
2.0 – 4.5 V
– – 3Ω
– – 6Ω
1–
0.5 –
– mhos
– mhos
Input Capacitance
NTE2380
NTE2381
Ciss
VDS = 25V, VGS = 0, f = 1MHz
– – 400 pF
– – 100 pF
Output Capacitance
NTE2380
NTE2381
Coss
– – 150 pF
– – 200 pF
Reverse Transfer Capacitance
NTE2380
Crss
– – 40 pF
NTE2381
– – 80 pF
Switching Characteristics (Note 1)
Turn–On Time
NTE2380
NTE2381
Rise Time
NTE2380
NTE2381
Turn–Off Time
NTE2380
NTE2381
Fall Time
NTE2380
NTE2381
td(on)
ID = 1A,
Rgen = 50Ω
tr
td(off)
tf
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
– – 60 ns
– – 50 ns
– – 50 ns
– – 100 ns
– – 60 ns
– – 150 ns
– – 30 ns
– – 50 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Switching Characteristics (Cont’d) (Note 1)
Total Gate Charge
NTE2380
NTE2381
Qg VGS = 10V, VDS = 400V,
ID = Rated ID
– 12 15 ns
– 20 25 ns
Gate–Source Charge
NTE2380
NTE2381
Qgs
– 6 – ns
– 10 – ns
Gate–Drain Charge
NTE2380
NTE2381
Qgd
– 6 – ns
– 10 – ns
Source Drain Diode Characteristics (Note 1)
Forward On–Voltage
NTE2380
NTE2381
VSD
IS = Rated ID, VGS = 0
– – 1.6 V
– 1.8 2.5 V
Forward Turn–On Time
Reverse Recovery Time
NTE2380
ton
trr
Limited by stray inductance
– 500 – ns
NTE2381
– 120 – ns
Internal Package Inductance
Internal Drain Inductance
Ld Measured from contact screw on – 3.5 – nH
tab to center of die
Measured from the drain lead
– 4.5 – nH
0.25” from package to center of die
Internal Source Inductance
Ls Measured from the source lead
– 7.5 – nH
0.25” from package to center of pad
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab
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