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NTE2381 PDF даташит

Спецификация NTE2381 изготовлена ​​​​«NTE» и имеет функцию, называемую «Complementary Silicon Gate MOSFETs».

Детали детали

Номер произв NTE2381
Описание Complementary Silicon Gate MOSFETs
Производители NTE
логотип NTE логотип 

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NTE2381 Даташит, Описание, Даташиты
NTE2380 (N–Ch) & NTE2381 (P–Ch)
Complementary Silicon Gate MOSFETs
Enhancement Mode, High Speed Switch
Description:
The NTE2380 (N–Ch) and NTE2381 (P–Ch) are complementary TMOS power FETs in a TO220 type
package designed for high voltage, high speed power switching applications such as switching regu-
lators, converters, solenoid, and relay drivers.
Features:
D Silicon Gate for Fast Switching Speeds
D Rugged – SOA is Power Dissipation Limited
D Source–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximim Ratings:
Drain–Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Drain–Gate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0A
Pulsed
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +25°C), PD
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/°C
Operating Temperature Range, Topr
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Thermal Resistance, Junction–to–Case, RthJC
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12°C/W
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67°C/W
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL
NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +275°C









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NTE2381 Даташит, Описание, Даташиты
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
NTE2380
NTE2381
V(BR)DSS VGS = 0, ID = 0.25mA
IDSS
VDS = 500V, VGS = 0
500 – – V
– – 0.25 mA
– – 0.2 mA
NTE2380 & NTE2381
GateBody Leakage Current, Forward
NTE2380
NTE2381
IGSSF
VDS = 400V, VGS = 0, TJ = +125°C
VGSF = 20V, VDS = 0
1.0 mA
500 nA
100 nA
GateBody Leakage Current, Reverse
NTE2380
NTE2381
IGSSR
VGSF = 20V, VDS = 0
– – 500 nA
– – 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage
NTE2380
NTE2381
Static DrainSource OnResistance
NTE2380
NTE2381
Forward Transconductance
NTE2380
NTE2381
Dynamic Characteristics
VGS(th)
rDS(on)
VDS = VGS
ID = 0.25mA
ID = 1mA
VGS = 10V, ID = 1A
gFS
ID = 1A
VDS 7.5V
VDS = 15V
2.0 4.0 V
2.0 4.5 V
– – 3
– – 6
1
0.5
mhos
mhos
Input Capacitance
NTE2380
NTE2381
Ciss
VDS = 25V, VGS = 0, f = 1MHz
– – 400 pF
– – 100 pF
Output Capacitance
NTE2380
NTE2381
Coss
– – 150 pF
– – 200 pF
Reverse Transfer Capacitance
NTE2380
Crss
– – 40 pF
NTE2381
– – 80 pF
Switching Characteristics (Note 1)
TurnOn Time
NTE2380
NTE2381
Rise Time
NTE2380
NTE2381
TurnOff Time
NTE2380
NTE2381
Fall Time
NTE2380
NTE2381
td(on)
ID = 1A,
Rgen = 50
tr
td(off)
tf
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
VDD [ 200V
VDS = 125V
– – 60 ns
– – 50 ns
– – 50 ns
– – 100 ns
– – 60 ns
– – 150 ns
– – 30 ns
– – 50 ns
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.









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NTE2381 Даташит, Описание, Даташиты
Electrical Characteristics (Contd): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Switching Characteristics (Contd) (Note 1)
Total Gate Charge
NTE2380
NTE2381
Qg VGS = 10V, VDS = 400V,
ID = Rated ID
12 15 ns
20 25 ns
GateSource Charge
NTE2380
NTE2381
Qgs
6 ns
10 ns
GateDrain Charge
NTE2380
NTE2381
Qgd
6 ns
10 ns
Source Drain Diode Characteristics (Note 1)
Forward OnVoltage
NTE2380
NTE2381
VSD
IS = Rated ID, VGS = 0
– – 1.6 V
1.8 2.5 V
Forward TurnOn Time
Reverse Recovery Time
NTE2380
ton
trr
Limited by stray inductance
500 ns
NTE2381
120 ns
Internal Package Inductance
Internal Drain Inductance
Ld Measured from contact screw on 3.5 nH
tab to center of die
Measured from the drain lead
4.5 nH
0.25from package to center of die
Internal Source Inductance
Ls Measured from the source lead
7.5 nH
0.25from package to center of pad
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Gate
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Source
Drain/Tab










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