DataSheet26.com

NTE2429 PDF даташит

Спецификация NTE2429 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Complementary Transistors».

Детали детали

Номер произв NTE2429
Описание Silicon Complementary Transistors
Производители NTE
логотип NTE логотип 

2 Pages
scroll

No Preview Available !

NTE2429 Даташит, Описание, Даташиты
NTE2428 (NPN) & NTE2429 (PNP)
Silicon Complementary Transistors
General Purpose Switch
Description:
The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount
package designed for use in thick and thin film circuits. Typical applications include telephone and
general industrial.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
DC Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
ICBO VCB = 60V, IE = 0
VCB = 60V, IE = 0, TJ = +150°C
V(BR)CEO IC = 10mA, IB = 0
V(BR)CES IC = 10µA, VBE = 0
V(BR)EBO IE = 10µA, IC = 0
VCE(sat) IC = 150mA, IB = 15mA, Note 2
IC = 500mA, IB = 50mA, Note 2
VBE(sat) IC = 150mA, IB = 15mA, Note 2
IC = 500mA, IB = 50mA, Note 2
Note 2. Measured under pulsed conditions.
Min Typ Max Unit
– – 100 nA
– – 50 µA
80 – – V
90 – – V
5––V
– – 250 mV
– – 500 mV
– – 1.0 V
– – 1.2 V









No Preview Available !

NTE2429 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DC Current Gain
hFE VCE = 5V, IC = 100µA, Note 2
30
Transition Frequency
Collector Capacitance
NTE2428
VCE = 5V, IC = 100mA, Note 2
100 300
VCE = 5V, IC = 500mA, Note 2
50
fT VCE = 10V, IC = 50mA, f = 35MHz 100
MHz
Cc VCB = 10V, IE = Ie = 0, f = 1MHz
– – 12 pF
NTE2429
– – 20 pF
Emitter Capacitance
NTE2428
Ce VEB = 500mV, IC = Ic = 0, f = 1MHz
90 pF
NTE2429
– – 120 pF
TurnOn Time
NTE2428
ton ICon = 100mA, IBon = IBoff = 5mA – – 250 ns
NTE2429
– – 500 ns
TurnOff Time
NTE2428
toff
– – 1000 ns
NTE2429
– – 650 ns
Note 2. Measured under pulsed conditions.
.059 (1.5)
.174 (4.42)
.067 (1.7)
.015 (0.32)
ECB
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
.096
(2.46)
.161
(4.1)
.041
(1.05)
Min










Скачать PDF:

[ NTE2429.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTE242Silicon Complementary TransistorsNTE
NTE
NTE2426Silicon Complementary Transistors Darlington SwitchNTE
NTE
NTE2427Silicon Complementary TransistorsNTE
NTE
NTE2428Silicon Complementary Transistors General Purpose SwitchNTE
NTE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск