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NTE2502 PDF даташит

Спецификация NTE2502 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Complementary Transistors».

Детали детали

Номер произв NTE2502
Описание Silicon Complementary Transistors
Производители NTE
логотип NTE логотип 

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NTE2502 Даташит, Описание, Даташиты
NTE2501 (NPN) & NTE2502 (PNP)
Silicon Complementary Transistors
High Voltage for Video Output
Features:
D High Breakdown Voltage
D Excellent High Frequency Characteristics
Applications:
D High Definition CRT Display
D Color TV Chroma Output, High Breakdown Voltage Drivers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
ICBO
IEBO
hFE
fT
VCB = 200V, IE = 0
VEB = 4V, IC = 0
VCE = 10V, IC = 10mA
VCE = 30V, IC = 10mA
Min Typ Max Unit
– – 0.1 µA
– – 0.1 µA
100 – 200
– 70 – MHz









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NTE2502 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Output Capacitance
NTE2501
NTE2502
Cob VCB = 30V, f = 1MHz
2.6 pF
3.1 pF
Reverse Transfer Capacitance
NTE2501
NTE2502
Cre VCB = 30V, f = 1MHz
1.8 pF
2.3 pF
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
CollectorBase Breakdown Voltage
CollectorEmitter Breakdown Voltage
EmitterBase Breakdown Voltage
VCE(sat) IC = 20mA, IB = 2mA
VBE(sat) IC = 20mA, IB = 2mA
V(BR)CBO IC = 10µA, IE = 0
V(BR)CEO IC = 1mA, RBE =
V(BR)EBO IE = 10µA, IC = 0
– – 600 mV
– – 1.0 V
300 – – V
300 – – V
5––V
.315 (8.0)
.118 (3.0)
Dia
.295
(7.5)
EC B
.433
(11.0)
.610
(15.5)
.130
(3.3)
.094 (2.4)










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