CEFM105 PDF даташит
Спецификация CEFM105 изготовлена «Comchip Technology» и имеет функцию, называемую «SMD Efficient Fast Recovery Rectifier». |
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Детали детали
Номер произв | CEFM105 |
Описание | SMD Efficient Fast Recovery Rectifier |
Производители | Comchip Technology |
логотип |
2 Pages
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SMD Efficient Fast Recovery Rectifier
CEFM101 Thru CEFM105
Reverse Voltage: 50 - 600 Volts
Forward Current: 1.0 Amp
Features
COMCHIP
www.comchip.com.tw
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time for high efficient
Built-in strain relief
Low forward voltage drop
MINI SMA
0.161(4.10)
0.146(3.70)
0.012(0.30) Typ.
0.071(1.80)
0.055(1.40)
Mechanical Data
Case: Mini-SMA/SOD-123 molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.04 gram
0.035(0.90) Typ.
0.110(2.80)
0.094(2.40)
0.063(1.60)
0.055(1.40)
0.035(0.90) Typ.
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
Parameter
Symbol
Max. Repetitive Peak Reverse Voltage VRRM
Max. DC Blocking Voltage
VDC
Max. RMS Voltage
VRMS
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
IFSM
Max. Average Forward Current
Io
Max. Instantaneous Forward Current
at 2.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100C
IR
Typical. Thermal Resistance (Note 1) R JL
Operating Junction Temperature
Tj
Storage Temperature
TSTG
CEFM
101
50
50
35
CEFM
102
100
100
70
CEFM
103
200
200
140
CEFM
104
400
400
280
30
0.875
25
1.0
1.1
35
5.0
250
42
-55 to +150
-55 to +150
CEFM
105
600
600
420
Unit
V
V
V
A
1.25
50
A
V
nS
uA
C/W
C
C
Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
MDS0210021C
Page 1
No Preview Available ! |
SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CEFM101 Thru CEFM105)
Fig. 1 - Reverse Characteristics
100
Tj=125 C
10
Fig.2 - Forward Characteristics
10
CEFM101-103
1.0
CEFM104
1.0 Tj=75 C
Tj=25 C
0.1
0. 01
0 15 30 45 60 75 90 105 120 135 150
Percent of Rated Peak Reverse Voltage (%)
0.1
CEFM105
0.01
Tj=25 C
Pulse width 300uS
4% duty cycle
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage (V)
Fig. 3 - Junction Capacitance
35
30
Tj=25 C
25
f=1MHz and applied
4VDC reverse voltage
20
CEFM101-103
15
10 CEFM104-105
5
0
0.01
0.1 1.0 10
Reverse Voltage (V)
100
Fig. 4 - Non Repetitive Forward
Surge Current
50
8.3mS Single Half Sine
Wave JEDEC methode
40
30
Tj=25 C
20
10
0
1
5 10
50 1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
()
D.U.T.
1W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
()
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
trr
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1cm
SET TIME BASE FOR
50 / 10ns / cm
Fig. 6 - Current Derating Curve
1.4
1.2
1.0
0.8
0.6
0.4
Single Phase
Half Wave 60Hz
0.2
0 0 25 50 75 100 125 150 175
Ambient Temperature ( C)
MDS0210021C
Page 2
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