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Datasheet CEG9926 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CEG9926 | Dual N-Channel Enhancement Mode Field Effect Transistor CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package.
G2 S2 S2 D2
D1 |  Chino-Excel Technology | transistor |
CEG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CEG2288 | Dual N-Channel Enhancement Mode Field Effect Transistor CEG2288
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
G2 S2  CET transistor | | |
| 2 | CEG6946 | Dual N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology transistor | | |
| 3 | CEG8205 | Dual N-Channel Enhancement Mode Field Effect Transistor CEG8205
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount CET transistor | | |
| 4 | CEG8205A | Dual N-Channel Enhancement Mode Field Effect Transistor CEG8205A
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Sur CET transistor | | |
| 5 | CEG8208 | Dual N-Channel Enhancement Mode Field Effect Transistor CEG8208
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TSSOP-8 for Surface M CET transistor | | |
| 6 | CEG9926 | Dual N-Channel Enhancement Mode Field Effect Transistor CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , RDS(ON)=30mΩ @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package.
G2 S2 S2 D2
D1 Chino-Excel Technology transistor | | |
| 7 | CEGS03xV0-G | Bidirectional ESD / Transient Suppressor
Bidirectional ESD / Transient Suppressor
CE Series -G (RoHS Device)
Features
(16kV) IEC 61000-4-2 rating Surface mount package High component density
SOT23-6
-VBD 0V +VBD
Applications
ESD suppression Transient suppression Automotive CAN Bus
Schematic
SOT23-5 SOT-23-3
3 2 1
 Comchip Technology tvs-diode | |
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