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NTE2575 PDF даташит

Спецификация NTE2575 изготовлена ​​​​«NTE» и имеет функцию, называемую «Complementary Silicon Transistors».

Детали детали

Номер произв NTE2575
Описание Complementary Silicon Transistors
Производители NTE
логотип NTE логотип 

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NTE2575 Даташит, Описание, Даташиты
NTE2574 (NPN) & NTE2575 (PNP)
Silicon Complementary Transistors
Video Output for HDTV
Features:
D High Collector Emitter Breakdown Voltage: VCEO = 120V Min
D High Gain Bandwidth Product: fT = 400MHz Typ
D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics:
NTE2574: Cre = 2.7pF
NTE2575: Cre = 4.0pF
D Isolated TO220 Type Package
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Collector Power Dissipation, PC
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8W
TA = +50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Output Capacitance
NTE2574
NTE2575
ICBO
IEBO
hFE
fT
Cob
VCB = 80V, IE = 0
VEB = 2V, IC = 0
VCE = 10V, IC = 50mA
VCE = 10V, IC = 200mA
VCE = 10V, IC = 50mA
VCB = 30V, f = 1MHz
Min Typ Max Unit
– – 0.1 µA
– 1.0 µA
100 – 320
20 – –
– 400 – MHz
– 3.1 – pF
– 4.4 – pF









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NTE2575 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Reverse Transfer Capacitance
NTE2574
NTE2575
Cre
VCB = 30V, f = 1MHz
2.7 pF
4.0 pF
CollectorEmitter Saturation Voltage
Emitter Base Saturation Voltage
VCE(sat) IC = 50mA, IB = 5mA
VBE(sat) IC = 50mA, IB = 5mA
– – 1.0 V
– – 1.0 V
.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.669
(17.0)
Max
BCE
.122 (3.1)
Dia
.165
(4.2)
.531
(13.5)
Min
.173 (4.4) Max
.114 (2.9) Max
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated










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