NTE32 PDF даташит
Спецификация NTE32 изготовлена «NTE» и имеет функцию, называемую «Silicon Complementary Transistors». |
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Детали детали
Номер произв | NTE32 |
Описание | Silicon Complementary Transistors |
Производители | NTE |
логотип |
2 Pages
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NTE31 (NPN) & NTE32 (PNP)
Silicon Complementary Transistors
TV Sound Output, TV Vertical Output,
AF Driver Output
Features:
D High Voltage: VCEO = 160V
D High Continuous Collector Current Capability
Applications:
D Vertical Deflection Output & Sound Output Applications for Line Operated TV
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
Transition Frequency
NTE31
NTE32
V(BR)CEO IC = 10mA, IB = 0
ICBO VCB = 150V, IE = 0
IEBO VEB = 6V, IC = 0
hFE VCE = 5V, IC = 200mA
VCE(sat) IC = 500mA, IB = 50mA
VBE VCE = 5V, IC = 5mA
fT VCE = 5V, IC = 200mA
Collector Output Capacitance
NTE31
NTE32
Cob VCB = 10V, IE = 0, f = 1MHz
Min Typ Max Unit
160 – – V
– – 1.0 µA
– – 1.0 µA
100 – 200
– – 1.5 V
0.45 – 0.75 V
20 100 – MHz
15 50 – MHz
– – 20 pF
– – 35 pF
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.339
(8.62)
Max
.512
(13.0)
Min
Seating Plane
.026 (.66)
Dia Max
ECB
.100 (2.54)
.240 (6.09) Max
.200
(5.08)
Max
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