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NTE332 PDF даташит

Спецификация NTE332 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon Complementary Transistors».

Детали детали

Номер произв NTE332
Описание Silicon Complementary Transistors
Производители NTE
логотип NTE логотип 

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NTE332 Даташит, Описание, Даташиты
NTE331 (NPN) & NTE332 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W Max
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Collector–Emitter Sustaining
Voltage
ICBO IE = 0, VCB = 100V
– – 500 µA
IE = 0, VCB = 100V, TC = +150°C – – 5 mA
ICEO IB = 0, VCE = 50V
– – 1 mA
IEBO IC = 0, VEB = 5V
– – 1 mA
VCEO(sus) IB = 0, IC = 100mA, Note 1
100 – – V
Collector–Emitter Saturation
Voltage
VCE(sat) IC = 5A, IB = 0.5A, Note 1
IC = 10A, IB = 2.5A, Note 1
––1V
––3V









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NTE332 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
BaseEmitter Saturation Voltage
BaseEmitter Voltage
DC Current Gain
VBE(sat)
VBE
hFE
IC = 10A, IB = 2.5A, Note 1
IC = 5A, VCE = 4V, Note 1
IC = 0.5A, VCE = 4V, Note 1
IC = 5A, VCE = 4V, Note 1
IC = 10A, VCE = 4V, Note 1
– – 2.5 V
– – 1.5 V
40 250
15 150
5––
Transistion Frequency
fT IC = 0.5A, VCE = 4V
3 – – MHz
Note 1. Pulsed; Pulse Duration = 300µs, Duty Cycle = 1.5%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.070 (1.78) Max
Base
.100 (2.54)
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab










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