NTE91 PDF даташит
Спецификация NTE91 изготовлена «NTE» и имеет функцию, называемую «Silicon Complementary Transistors». |
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Детали детали
Номер произв | NTE91 |
Описание | Silicon Complementary Transistors |
Производители | NTE |
логотип |
2 Pages
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NTE90 (NPN) & NTE91 (PNP)
Silicon Complementary Transistors
General Purpose High Gain Amplifier
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Base−Emitter Voltage
Collector−Emitter Saturation Voltage
Current Gain−Bandwidth Product
Collector Output Capacitance
V(BR)CEO
V(BR)CBO
ICBO
hFE1
hFE2
VBE
VCE(sat)
fT
Cob
IC = 1mA, RBE = ∞
IC = 10µA, IE = 0
VCB = 100V, IB = 0
VCE = 12V, IC = 2mA
VCE = 12V, IC = 10mA
VCE = 12V, IC = 2mA
IC = 10mA, IB = 1mA
VCE = 12V, IC = 5mA
VCB = 25V, IE = 0, f = 1MHz
Min Typ Max Unit
120 − − V
120 − − V
− − 0.5 µA
400 − 800
125 − −
− − 0.75 V
− − 0.2 V
− 350 − MHz
− 1.6 − pF
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.339
(8.62)
Max
.512
(13.0)
Min
Seating Plane
.026 (.66)
Dia Max
ECB
.100 (2.54)
.240 (6.09) Max
.200
(5.08)
Max
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