NTE93 PDF даташит
Спецификация NTE93 изготовлена «NTE» и имеет функцию, называемую «Silicon Complementary Transistors». |
|
Детали детали
Номер произв | NTE93 |
Описание | Silicon Complementary Transistors |
Производители | NTE |
логотип |
2 Pages
No Preview Available ! |
NTE92 (NPN) & NTE93 (PNP)
Silicon Complementary Transistors
Hi−Fi Power Amp, Audio Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Note 1. Matched complementary pairs are available upon request (NTE93MCP). Matched comple-
mentary pairs have their gain specification (hFE) matched to within 10% of each other.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Current
ICBO
IEBO
VCB = 200V
VBE = 6V
Collector−Emitter Breakdown Voltage
DC Current Gain
Collector−Emitter Saturation Voltage
Transistion Frequency
V(BR)CEO IC = 50mA
hFE VCE = 4V, IC = 5A
VCE(sat) IC = 10A, IB = 1A
fT VCE = 12V, IE = 0.5A
Min Typ Max Unit
− − 0.1 mA
− − 0.1 mA
200 − − V
30 120 −
−3 −V
− 20 − MHz
No Preview Available ! |
1.430 (36.32)
.961 (24.42)
B CE
.215 (5.48)
Collector connected to Tab
.843
(21.42)
.788
(20.02)
Min
.118 (3.0)
.244 (6.2) Max
Скачать PDF:
[ NTE93.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NTE90 | Silicon Complementary Transistors General Purpose High Gain Amplifier | NTE Electronics |
NTE902 | Integrated Circuit Operational Transconductance Amplifier | NTE Electronics |
NTE903 | Integrated Circuit Operational Amplifier | NTE Electronics |
NTE904 | Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair) | NTE Electronics |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |