SC8252B PDF даташит
Спецификация SC8252B изготовлена «SamHop» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | SC8252B |
Описание | Dual N-Channel Enhancement Mode Field Effect Transistor |
Производители | SamHop |
логотип |
8 Pages
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SC8252BGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 4.0
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Max
45.0 @ VGS=4.5V
48.0 @ VGS=4.0V
24V 6A
57.0 @ VGS=3.1V
70.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP
TOP VIEW
1.33 㫧 0.03
8252B
Date Code
BOTTOM VIEW
0.65
G2 S2
G1 S1
0.65
1-pin index mark S1
Mark area
0.210 㫧 0.010
0.107 㫧 0.007
4 - φ 0.31
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
24
VGSS
IS
ISP
Gate-Source Voltage
Source Current-Continuous a
-Pulsed b
±12
6
60
PT Total Power Dissipation a
1.6
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
FET1
Gate 1
FET2
Gate 2
Gate
Protect
Diode
Source 1
Body Diode
Source 2
Details are subject to change without notice.
1
Sep,04,2015
www.samhop.com.tw
No Preview Available ! |
SC8252B
Ver 4.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVSSS Source-Source Breakdown Voltage
ISSS Zero Gate Voltage Source Current
IGSS Gate-Body Leakage Current
VGS=0V , IS=250uA
VSS=24V , VGS=0V
VGS= ±12V , VSS=0V
24 V
1 uA
±10 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RSS(ON) Source-Source On-State Resistance
gFS Forward Transconductance
VSS=VGS , IS=1mA
VGS=4.5V , IS=3A
VGS=4.0V , IS=3A
VGS=3.1V , IS=3A
VGS=2.5V , IS=3A
VSS=5V , IS=3A
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VSS=10V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
VDD=20V
IS=3A
VGS=4.0V
RGEN=6 ohm
VDD=20V,IS=6A,
VG1S1=4.0V
0.5 0.8 1.5
V
29 39 45 m ohm
30 41 48 m ohm
36 48 57 m ohm
42 58 70 m ohm
16 S
254 pF
126 pF
47 pF
151
494
1477
812
7.9
ns
ns
ns
ns
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VFSS
Diode Forward Voltage
VGS=0V,IS=1.5A
Note
a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.6mm.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
0.81 1.2
V
Sep,04,2015
2 www.samhop.com.tw
No Preview Available ! |
SC8252B
Ver 4.0
VSSS / I SSS
G2
S2
G1
VGS (off)
G2
G1
S1
S2
10V 1mA
S1
IGSS (+) / (--)
S2
G2
G1
| yfs |
G2
S1
S2
G1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Sep,04,2015
3 www.samhop.com.tw
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Номер в каталоге | Описание | Производители |
SC8252 | Dual N-Channel Enhancement Mode Field Effect Transistor | SamHop |
SC8252B | Dual N-Channel Enhancement Mode Field Effect Transistor | SamHop |
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