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SC8252B PDF даташит

Спецификация SC8252B изготовлена ​​​​«SamHop» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SC8252B
Описание Dual N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop
логотип SamHop логотип 

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SC8252B Даташит, Описание, Даташиты
SC8252BGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 4.0
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Max
45.0 @ VGS=4.5V
48.0 @ VGS=4.0V
24V 6A
57.0 @ VGS=3.1V
70.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP
TOP VIEW
1.33 0.03
8252B
Date Code
BOTTOM VIEW
0.65
G2 S2
G1 S1
0.65
1-pin index mark S1
Mark area
0.210 0.010
0.107 0.007
4 - φ 0.31
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
Unit : mm
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
24
VGSS
IS
ISP
Gate-Source Voltage
Source Current-Continuous a
-Pulsed b
±12
6
60
PT Total Power Dissipation a
1.6
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
FET1
Gate 1
FET2
Gate 2
Gate
Protect
Diode
Source 1
Body Diode
Source 2
Details are subject to change without notice.
1
Sep,04,2015
www.samhop.com.tw









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SC8252B Даташит, Описание, Даташиты
SC8252B
Ver 4.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVSSS Source-Source Breakdown Voltage
ISSS Zero Gate Voltage Source Current
IGSS Gate-Body Leakage Current
VGS=0V , IS=250uA
VSS=24V , VGS=0V
VGS= ±12V , VSS=0V
24 V
1 uA
±10 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RSS(ON) Source-Source On-State Resistance
gFS Forward Transconductance
VSS=VGS , IS=1mA
VGS=4.5V , IS=3A
VGS=4.0V , IS=3A
VGS=3.1V , IS=3A
VGS=2.5V , IS=3A
VSS=5V , IS=3A
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VSS=10V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
VDD=20V
IS=3A
VGS=4.0V
RGEN=6 ohm
VDD=20V,IS=6A,
VG1S1=4.0V
0.5 0.8 1.5
V
29 39 45 m ohm
30 41 48 m ohm
36 48 57 m ohm
42 58 70 m ohm
16 S
254 pF
126 pF
47 pF
151
494
1477
812
7.9
ns
ns
ns
ns
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VFSS
Diode Forward Voltage
VGS=0V,IS=1.5A
Note
a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.6mm.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
0.81 1.2
V
Sep,04,2015
2 www.samhop.com.tw









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SC8252B Даташит, Описание, Даташиты
SC8252B
Ver 4.0
VSSS / I SSS
G2
S2
G1
VGS (off)
G2
G1
S1
S2
10V 1mA
S1
IGSS (+) / (--)
S2
G2
G1
| yfs |
G2
S1
S2
G1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Sep,04,2015
3 www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
SC8252Dual N-Channel Enhancement Mode Field Effect TransistorSamHop
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SC8252BDual N-Channel Enhancement Mode Field Effect TransistorSamHop
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