SC8611 PDF даташит
Спецификация SC8611 изготовлена «SamHop» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | SC8611 |
Описание | Dual N-Channel Enhancement Mode Field Effect Transistor |
Производители | SamHop |
логотип |
5 Pages
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Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SC8611
Ver 1.0
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Typ
2.5 @ VGS=4.5V
2.6 @ VGS=4.0V
12V 27A 2.8 @ VGS=3.8V
3.3 @ VGS=3.1V
4.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP TOP VIEW
BOTTOM VIEW
1.77
4x 0.25 㫧 0.03
43
52
61
Mark area 1-pin index mark S1
3
2x φ 0.25 㫧 0.03
2
1
0.16 㫧㩷0.01
4
5
6
0.25
0.5
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
12
VGSS
IS
ISP
Gate-Source Voltage
Source Current-Continuous a
-Pulsed b
±8
27
100
PT Total Power Dissipation a
2.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
Details are subject to change without notice.
1
LAND PATTERN (REFERENCE)
2X
0.25
8X
R0.125
PIN 2
Unit : mm
PIN 5
PIN 1,3
PIN 4,6
PIN 1 : Source 1
PIN 2 : Gate 1
PIN 3 : Source 1
PIN 4 : Source 2
PIN 5: Gate 2
PIN 6 : Source 2
Jul,07,2015
www.samhop.com.tw
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SC8611
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVSSS Source-Source Breakdown Voltage
ISSS Zero Gate Voltage Source Current
IGSS Gate-Body Leakage Current
VGS=0V , IS=1mA
VSS=10V , VGS=0V
VGS= ±5V , VSS=0V
12 V
1 uA
±1 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RSS(ON) Source-Source On-State Resistance
gFS Forward Transconductance
VSS=VGS , IS=1mA
VGS=4.5V , IS=5.0A
VGS=4.0V , IS=5.0A
VGS=3.8V , IS=5.0A
VGS=3.1V , IS=5.0A
VGS=2.5V , IS=5.0A
VSS=6V , IS=3A
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
VSS=6V
IS=3A
VGS=4.5V
Qg Total Gate Charge
VSS=6V,IS=27A,
VGS=4.5V
0.5 1.3 V
1.8 2.5 3.2 m ohm
1.9 2.6 3.2 m ohm
2.0 2.8 3.3 m ohm
2.1 3.2 4.4 m ohm
2.7 4.0 6.3 m ohm
19 S
80
570
38000
17700
100
ns
ns
ns
ns
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VFSS
Diode Forward Voltage
VGS=0V,IS=3A
Note
a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.0mm.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
0.75 1.2
V
Jul,07,2015
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SC8611
Ver 1.0
VSSS / I SSS
G2
S2
G1
VGS (off)
G2
G1
S1
S2
10V 1mA
S1
IGSS (+) / (--)
S2
G2
G1
| yfs |
G2
S1
S2
G1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Jul,07,2015
3 www.samhop.com.tw
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Номер в каталоге | Описание | Производители |
SC8611 | Dual N-Channel Enhancement Mode Field Effect Transistor | SamHop |
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