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SC8652 PDF даташит

Спецификация SC8652 изготовлена ​​​​«SamHop» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SC8652
Описание Dual N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop
логотип SamHop логотип 

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SC8652 Даташит, Описание, Даташиты
Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SC8652
Preliminary
PRODUCT SUMMARY
VSSS
IS RSS(ON) (mΩ) Typ
4.2 @ VGS=4.5V
4.3 @ VGS=4.0V
20V 18A 4.4 @ VGS=3.8V
4.9 @ VGS=3.1V
5.6 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP
TOP VIEW
1.77 0.04
BOTTOM VIEW
0.485 0.80
LAND PATTERN (REFERENCE)
0.80
43
52
φ 0.25
61
Mark area
1-pin index mark S1
0.35
0.16 㫧㩷0.01
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
20
VGSS
IS
ISP
Gate-Source Voltage
Source Current-Continuous a
-Pulsed b
±8
18
100
PT Total Power Dissipation a
2.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
Details are subject to change without notice.
1
φ 0.25
0.35
PIN 2
Unit : mm
PIN 5
PIN 1,3
PIN 4,6
PIN 1 : Source 1
PIN 2 : Gate 1
PIN 3 : Source 1
PIN 4 : Source 2
PIN 5: Gate 2
PIN 6 : Source 2
Jul,07,2015
www.samhop.com.tw









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SC8652 Даташит, Описание, Даташиты
SC8652
Preliminary
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVSSS Source-Source Breakdown Voltage
ISSS Zero Gate Voltage Source Current
IGSS Gate-Body Leakage Current
VGS=0V , IS=1mA
VSS=10V , VGS=0V
VGS= ±8V , VSS=0V
20 V
1 uA
±1 uA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RSS(ON) Source-Source On-State Resistance
gFS Forward Transconductance
VSS=VGS , IS=1mA
VGS=4.5V , IS=5.0A
VGS=4.0V , IS=5.0A
VGS=3.8V , IS=5.0A
VGS=3.1V , IS=5.0A
VGS=2.5V , IS=5.0A
VSS=6V , IS=3A
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
VSS=6V
IS=3A
VGS=4.5V
Qg Total Gate Charge
VSS=6V,IS=18A,
VGS=4.5V
0.5 1.3 V
3.3 4.2 5.1 m ohm
3.4 4.3 5.2 m ohm
3.5 4.4 5.3 m ohm
3.9 4.9 6.4 m ohm
4.4 5.6 7.9 m ohm
19 S
80
570
38000
17700
100
ns
ns
ns
ns
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VFSS
Diode Forward Voltage
VGS=0V,IS=3A
Note
a.Mounted on FR4 board of 25.4mm x 25.4mm x 1.0mm.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
0.75 1.2
V
Jul,07,2015
2 www.samhop.com.tw









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SC8652 Даташит, Описание, Даташиты
SC8652
Preliminary
VSSS / I SSS
G2
S2
G1
VGS (off)
G2
G1
S1
S2
10V 1mA
S1
IGSS (+) / (--)
S2
G2
G1
| yfs |
G2
S1
S2
G1
S1
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Jul,07,2015
3 www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
SC8650Dual N-Channel Enhancement Mode Field Effect TransistorSamHop
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SC8652Dual N-Channel Enhancement Mode Field Effect TransistorSamHop
SamHop

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