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PDF CFH800 Data sheet ( Hoja de datos )
| Número de pieza | CFH800 | |
| Descripción | Typical Common Source S - Parameters | |
| Fabricantes | ETC | |
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P - HEMT
CFH800
________________________________________________________________________________________________________
Preliminary Datasheet
Features
• Low noise figure and high associated gain for
high IP3 receiver stages up to 4GHz
Suitable for PCS CDMA and UMTS applications
(F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)
• Low cost miniature package SOT343
• LG = 0.4µm; WG = 800µm
• Tape and Reel packaging
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
Type
CFH 800
Marking
N8s
Ordering code
(taped)
on request
Package 1)
SOT343
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < tbd°C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
Thermal resistance
Channel-soldering point source
RthChS
1) Dimensions see page 7
2) TS: Temperature measured at soldering point
5.5
6.5
-2.0
160
150
-65...+150
350
198
Unit
V
V
V
mA
°C
°C
mW
K/W
Infineon Technologies
pg. 1/7
01.03.2002
WS GS CE GaAs
1 page  
P - HEMT
CFH800
________________________________________________________________________________________________________
Typical Common Source S – Parameters
@ 3V; 30mA; Zo = 50Ω
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
0.1
0.9654
-20 18.0171 164.6 0.0133
29.7 0.4513 -22.9
0.2
0.9138 -30.7 17.3207 157.5 0.0222
56.2 0.4306 -34.6
0.3
0.8673 -46.5 16.3632 147.3 0.0373
65.4 0.4156 -51.6
0.4
0.8224
-61 15.1455
138 0.0472
61.9 0.405 -65.2
0.5
0.7789 -73.5 13.8972 129.8 0.0555
58.7 0.3886 -77.3
0.6
0.7403 -85.1 12.708 122.7 0.0619
54.9 0.3734 -88.4
0.7
0.7062 -95.1 11.6667 116.5 0.0663
52.3 0.3624 -97.8
0.8
0.6772 -104.5 10.683 111.1 0.0712
50.5 0.3507 -106.9
0.9
0.6531 -112.7 9.828 106.4 0.0748
49.1 0.3377 -114.3
1
0.6348 -120.4 9.0566
102 0.079
47.4 0.3262 -122.3
1.1 0.6211 -127.3 8.3928
98 0.0818
46.5 0.3153 -129.1
1.2
0.6105 -133.9 7.8152
94.1 0.0842
46 0.305
-136
1.3
0.6033 -139.5 7.2867
90.5 0.0872
45.9 0.2968 -142.2
1.4
0.5994
-145 6.8305
87.1
0.09
45.2 0.2902 -149.2
1.5
0.597 -149.9 6.4218
84 0.0928
45.4 0.2884 -155.1
1.6
0.5958 -154.8 6.0636
81.1 0.0948
45 0.2853 -161.6
1.7
0.5955 -159.1 5.7329
78.2 0.0973
45.3 0.2866 -167.2
1.8
0.5967 -163.3 5.4261
75.4 0.0996
45.3 0.2892 -173.6
1.9
0.5991 -167.2 5.1489
72.6 0.1012
45.8 0.2968 -178.7
2
0.6022 -170.9 4.8835
70.2 0.1029
45.9 0.3037 176.3
2.1
0.6071 -174.4 4.6448
67.8 0.1049
45.8 0.3129
172
2.2
0.6114 -177.4 4.4241
65.4 0.1074
45.3 0.3223 167.9
2.3
0.6159 179.4 4.2115
63.1 0.1092
45.1 0.3351 164.2
2.4
0.6176 176.5 4.0336
60.8 0.1116
44.9 0.3455
161
2.5
0.6201 173.5 3.8571
58.7 0.1131
45.4 0.3592 158.3
3
0.6346 161.8 3.1643
49.3 0.1225
47.1 0.4066 149.6
3.5
0.6381 151.7 2.6828
40.4 0.1314
49 0.4351 144.5
4
0.6421 142.7 2.3404
33.2 0.1407
51.4
0.44 141.5
4.5
0.6281 135.1 2.1167
25.4 0.158
52.7 0.4268 137.7
5
0.6189 127.5 1.9576
17.4 0.1779
52.4 0.4206
132
5.5
0.6244 120.8 1.8288
7.7 0.1996
49.9 0.4179
124
6
0.6394 113.5 1.7148
-2.4 0.2085
44.3 0.4245 110.7
Typical Common Source Noise – Parameters
@ 3V; 30mA; Zo = 50Ω
f[GHz]
0.9
1.8
2.4
3.0
Fmin [dB]
0.38
0.52
0.56
0.65
Ga [dB]
21.1
16.8
14.0
12.2
Mag (Γopt ) Phase(Γopt)
[deg]
0.30 45
0.39 125
0.42 145
0.43 179
Rn/50
0.09
0.08
0.07
0.06
Infineon Technologies
pg. 5/7
01.03.2002
WS GS CE GaAs
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet CFH800.PDF ] | |
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