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PDF S9012LT1 Data sheet ( Hoja de datos )
| Número de pieza | S9012LT1 | |
| Descripción | PNP Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SOT-23 Plastic-Encapsulate Transistors
S9012LT1 TRANSISTOR (PNP)
FEATURES
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: -0.5 A
Collector-base voltage
V(BR)CBO: -40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
fT
Ic= -100µA, IE=0
Ic= -1mA, IB=0
IE=-100µA, IC=0
VCB=-40 V, IE=0
VCE=-20V, IB=0
VEB= -5V, IC=0
VCE=-1V, IC= -50mA
VCE=-1V, IC=-500mA
IC=-500 mA, IB= -50mA
IC=-500 mA, IB= -50mA
VCE=-6V, IC= -20mA
f=30MHz
H
200-350
-40
-25
-5
120
40
150
V
V
V
-0.1 µA
-0.1 µA
-0.1 µA
400
-0.6 V
-1.2 V
MHz
J
300-400
DEVICE MARKING
S9012LT1=2TY
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| PDF Descargar | [ Datasheet S9012LT1.PDF ] | |
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