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Número de pieza | CFY30 | |
Descripción | GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CFY30 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! GaAs FET
CFY 30
________________________________________________________________________________________________________
Datasheet
* Low noise ( Fmin = 1.4 dB @ 4 GHz )
* High gain ( 11.5 dB typ. @ 4 GHz )
* For oscillators up to 12 GHz
* For amplifiers up to 6 GHz
* Ion implanted planar structure
* Chip all gold metallization
* Chip nitride passivation
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CFY 30
Marking
Ordering code Pin Configuration
(tape and reel) 1 2 3 4
A2 Q62703-F97 S D S G
Package 1)
SOT-143
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < 70°C) 2)
Thermal resistance
Channel-soldering point 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
RthChS
Value
5
7
-4 ... +0.5
80
150
-40...+150
250
<320
Unit
V
V
V
mA
°C
°C
mW
K/W
1) Dimensions see chapter Package Outlines
2) TS is measured on the source 1 lead at the soldering point to the PCB.
Siemens Aktiengesellschaft
pg. 1/6
11.01.1996
HL EH PD 21
1 page GaAs FET
CFY 30
________________________________________________________________________________________________________
Typical Common Source S-Parameters
f
GHz
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
6.4
6.8
7.2
7.6
8.0
8.4
8.8
9.2
9.6
10.0
10.4
10.8
11.2
11.6
12.0
ID = 15 mA UD = 3.5 V Z0 = 50 Ω
S11
Mag Ang
1.00
-1
1.00
-6
0.99
-14
0.98
-21
0.97
-28
0.96
-36
0.93
-44
0.90
-53
0.87
-62
0.83
-72
0.80
-82
0.77
-92
0.74
-104
0.70
-115
0.66
-127
0.63
-139
0.60
-150
0.57
-162
0.55
-174
0.54
172
0.53
160
0.54
147
0.55
135
0.56
124
0.57
114
0.58
106
0.59
98
0.60
91
0.61
85
0.62
79
0.62
74
S21
Mag Ang
2.43
178
2.43
171
2.43
162
2.43
154
2.44
145
2.45
137
2.47
129
2.49
120
2.50
111
2.50
102
2.50
93
2.51
83
2.49
73
2.45
64
2.41
54
2.36
45
2.30
37
2.24 27
2.19 17
2.14 8
2.08 -2
2.00 -11
1.92 -21
1.83 -30
1.72 -40
1.61 -48
1.51 -56
1.42 -62
1.35 -69
1.30 -75
1.25 -81
S12
Mag Ang
0.003
87
0.010
23
0.020
78
0.030
72
0.040
66
0.050
60
0.058
55
0.066
50
0.074
45
0.082
39
0.090
32
0.097
25
0.103
18
0.108
12
0.112
6
0.114
0
0.115
-6
0.116
-11
0.116
-17
0.116
-22
0.115
-27
0.113
-32
0.111
-37
0.109
-42
0.107
-46
0.104
-50
0.102
-53
0.101
-56
0.099
-58
0.098
-60
0.096
-63
S22
Mag Ang
0.70 -1
0.69 -5
0.68 -11
0.67 -15
0.66 -20
0.65 -26
0.64 -30
0.62 -35
0.60 -41
0.57 -47
0.54 -54
0.50 -61
0.46 -67
0.43 -73
0.40 -80
0.36 -88
0.31 -98
0.27 -110
0.24 -122
0.21 -137
0.19 -154
0.18 -173
0.18
171
0.19
155
0.21
141
0.23 128
0.26
118
0.29
108
0.32
100
0.34
93
0.36
85
Siemens Aktiengesellschaft
pg. 5/6
11.01.1996
HL EH PD 21
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet CFY30.PDF ] |
Número de pieza | Descripción | Fabricantes |
CFY30 | GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) | Siemens Semiconductor Group |
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CFY35-23 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) | Siemens Semiconductor Group |
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