CFY67-08 PDF даташит
Спецификация CFY67-08 изготовлена «Infineon Technologies AG» и имеет функцию, называемую «HiRel K-Band GaAs Super Low Noise HEMT». |
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Детали детали
Номер произв | CFY67-08 |
Описание | HiRel K-Band GaAs Super Low Noise HEMT |
Производители | Infineon Technologies AG |
логотип |
9 Pages
No Preview Available ! |
CFY67
HiRel K-Band GaAs Super Low Noise HEMT
• HiRel Discrete and Microwave Semiconductor
• Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT
• For professional super low-noise amplifiers
• For frequencies from 500 MHz to > 20 GHz
• Hermetically sealed microwave package
• Super low noise figure, high associated gain
• Space Qualified
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 to 04, 05 foreseen (tbc.)
4
1
3
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
CFY67-06 (ql)
CFY67-08 (ql)
CFY67-08P (ql)
CFY67-10 (ql)
CFY67-10P (ql)
Marking Ordering Code Pin Configuration Package
1234
- see below
G S D S Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
(see order instructions for ordering example)
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62702F1699
on request
on request
Q62702F1699
Semiconductor Group
1 of 10
Draft D, September 99
No Preview Available ! |
Maximum Ratings
CFY67
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse / forward)
Drain current
Gate forward current
RF Input Power, C- and X-Band 1)
Junction temperature
Storage temperature range
Total power dissipation 2)
Soldering temperature 3)
Thermal Resistance
Junction-soldering point
Symbol
VDS
VDG
VGS
ID
IG
PRF,in
TJ
Tstg
Ptot
Tsol
Values
3.5
4.5
- 3... + 0.5
60
2
+ 10
150
- 65... + 150
200
230
Rth JS
≤ 515 (tbc.)
Unit
V
V
V
mA
mA
dBm
°C
°C
mW
°C
K/W
Notes.:
1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.
2) At TS = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
2 of 10
Draft D, September 99
No Preview Available ! |
CFY67
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
Gate threshold voltage
VDS = 2 V, ID = 1 mA
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V
Gate leakage current at pinch-off
VDS = 1.5 V, VGS = - 3 V
Transconductance
VDS = 2 V, ID = 15 mA
Gate leakage current at operation
VDS = 2 V, ID = 15 mA
Thermal resistance
junction to soldering point
Symbol
min.
Values
Unit
typ. max.
IDss
-VGth
IDp
15 30 60 mA
0.2 0.7
2.0 V
-
< 50 -
µA
-IGp -
< 50 200 µA
gm15
50 65
-
mS
-IG15
-
< 0.5 2
µA
Rth JS
-
450 -
K/W
Semiconductor Group
3 of 10
Draft D, September 99
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Номер в каталоге | Описание | Производители |
CFY67-06 | HiRel K-Band GaAs Super Low Noise HEMT | Infineon Technologies AG |
CFY67-08 | HiRel K-Band GaAs Super Low Noise HEMT | Infineon Technologies AG |
CFY67-08P | HiRel K-Band GaAs Super Low Noise HEMT | Infineon Technologies AG |
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