CFY77-10 PDF даташит
Спецификация CFY77-10 изготовлена «Siemens Semiconductor Group» и имеет функцию, называемую «AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)». |
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Детали детали
Номер произв | CFY77-10 |
Описание | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Производители | Siemens Semiconductor Group |
логотип |
4 Pages
No Preview Available ! |
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Datasheet
Features
* Very low noise
* Very high gain
* For low noise front end amplifiers up to 20 GHz
* For DBS down converters
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CFY77-08
Marking
HG
Ordering code
(taped)
Q62702-F1549
CFY77-10
HH Q62702-F1559
Package 1)
MW-4
MW-4
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < 51°C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
Thermal resistance
Channel-soldering point source
RthChS
1) Dimensions see chapter Package Outlines
2) TS: Temperature measured at soldering point
Siemens Aktiengesellschaft
pg. 1/4
3.5
4.5
-3.0
60
150
-65...+150
180
550
Unit
V
V
V
mA
°C
°C
mW
K/W
11.01.1996
HL EH PD 21
No Preview Available ! |
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C
unless otherwise specified
Characteristics
Symbol
Drain-source saturation current
VDS = 2 V VGS = 0 V
Pinch-off voltage
VDS = 2 V ID = 1 mA
Gate leakage current
VDS = 2 V ID = 15 mA
Transconductance
VDS = 2 V ID = 15 mA
Noise figure
VDS = 2 V ID = 15 mA
f = 12 GHz
CFY77-08
CFY77-10
Associated gain
VDS = 2 V ID = 15 mA
CFY77-08
CFY77-10
f = 12 GHz
IDSS
VGS(P)
IG
gm
F
Ga
min
15
-2
-
50
-
-
10
9.5
typ
30
-0.7
0.05
65
0.7
0.9
10.5
10
max
60
-0.2
2
-
0.8
1
-
-
Unit
mA
V
µA
mS
dB
dB
Siemens Aktiengesellschaft
pg. 2/4
11.01.1996
HL EH PD 21
No Preview Available ! |
AlGaAs / InGaAs HEMT
CFY 77
________________________________________________________________________________________________________
Total Power Dissipation Ptot = f (TS;TA)
Package mounted on alumina
200
180
P [ mW ]
tot
160
140
120
100
80
60
40
20
0
0
TA TS
50 100 150
TA ; TS [ °C ]
f
GHz
2
4
6
8
10
12
14
Typical Common Source Noise Parameters
ID = 15 mA
UDS = 2.0 V
Z0 = 50 Ω
Fmin Ga Γopt
Rn rn
N
dB dB MAG ANG Ω
0.36 19.4 0.79 27 13.7 0.274 0.03
0.44 15.9 0.72 60 10.1 0.202 0.04
0.51 13.9 0.63 92 5.85 0.117 0.05
0.58 12.4 0.56 134 2.35 0.047 0.06
0.65 11.2 0.52 180 1.1 0.022 0.07
0.72 10.4 0.54 -135 2.9 0.058 0.08
0.80 9.7 0.59 -108 7.15 0.143 0.10
F50Ω
dB
1.2
1.1
1.05
1.0
1.0
1.1
1.5
Siemens Aktiengesellschaft
pg. 3/4
11.01.1996
HL EH PD 21
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Номер в каталоге | Описание | Производители |
CFY77-10 | AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) | Siemens Semiconductor Group |
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