CGD923 PDF даташит
Спецификация CGD923 изготовлена «NXP Semiconductors» и имеет функцию, называемую «870 MHz/ 20 dB gain power doubler amplifier». |
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Детали детали
Номер произв | CGD923 |
Описание | 870 MHz/ 20 dB gain power doubler amplifier |
Производители | NXP Semiconductors |
логотип |
8 Pages
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D848
CGD923
870 MHz, 20 dB gain power doubler
amplifier
Product specification
2002 Oct 08
No Preview Available ! |
Philips Semiconductors
870 MHz, 20 dB gain power doubler amplifier
Product specification
CGD923
FEATURES
• High output capability
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Rugged construction
• Gold metallization ensures excellent reliability
• Adjustable supply current.
PINNING - SOT115AE
PIN
1
2 and 3
4
5
7 and 8
9
DESCRIPTION
input
common
IDC adjust
+VB
common
output
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
24
8
13 579
DESCRIPTION
Hybrid amplifier module in a SOT115AE package
operating at a voltage supply of 24 V (DC), employing both
GaAs and Si dies.
Side view
MGU820
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
Itot
PARAMETER
power gain
total current consumption (DC)
CONDITIONS
f = 45 MHz
f = 870 MHz
VB = 24 V
pin 4 not connected
pin 4 connected to ground
MIN.
19.25
19.5
−
460
385
MAX.
19.75
20.5
−
490
415
UNIT
dB
dB
mA
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VB
Vi
Tstg
Tmb
IDC adjust
supply voltage
RF input voltage
single tone
132 channels flat
storage temperature
operating mounting base temperature
DC current adjust
MIN.
−
MAX.
30
UNIT
V
− 70 dBmV
− 45 dBmV
−40
+100
°C
−20
+100
°C
−10 0
mA
2002 Oct 08
2
No Preview Available ! |
Philips Semiconductors
870 MHz, 20 dB gain power doubler amplifier
Product specification
CGD923
CHARACTERISTICS
Bandwidth 45 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Gp power gain
f = 45 MHz
f = 870 MHz
SL
slope straight line
f = 45 to 870 MHz
FL flatness straight line f = 45 to 100 MHz
f = 100 to 800 MHz
f = 800 to 870 MHz
s11
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 870 MHz
s22 output return losses f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 870 MHz
s21 phase response
f = 50 MHz
s12 reverse isolation RFout to RFin
NF noise figure
f = 50 MHz
f = 870 MHz
19.25
19.5
0.0
−0.2
−0.6
−0.45
20
19
18
17
16
20
19
18
17
16
−45
−
−
−
19.5
20.0
0.5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
19.75
20.5
1.0
+0.2
+0.4
+0.2
−
−
−
−
−
−
−
−
−
−
+45
22
5
5.5
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
Pin 4 not connected
Itot total current
note 2
consumption (DC)
460 475 490 mA
CTB
composite triple beat 79 chs; fm = 445.25 MHz; note 1
− − −64 dB
79 chs flat; Vo = 50 dBmV; fm = 547.25 MHz − − −64 dB
Xmod
cross modulation
132 chs flat; Vo = 48 dBmV; fm = 745.25 MHz − − −56 dB
79 chs; fm = 55.25 MHz; note 1
− − −57 dB
79 chs flat; Vo = 50 dBmV; fm = 55.25 MHz − − −57 dB
132 chs flat; Vo = 48 dBmV; fm = 55.25 MHz − − −57 dB
CSOsum composite second
79 chs; fm = 446.5 MHz; note 1
− − −60 dB
order distortion (sum) 79 chs flat; Vo = 50 dBmV; fm = 548.5 MHz − − −60 dB
132 chs flat; Vo = 48 dBmV; fm = 860.5 MHz − − −54 dB
CSOdiff composite second
79 chs; fm = 150 MHz; note 1
− − −60 dB
order distortion (diff) 79 chs flat; Vo = 50 dBmV; fm = 150 MHz
−
−
−60 dB
132 chs flat; Vo = 48 dBmV; fm = 150 MHz − − −56 dB
2002 Oct 08
3
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