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9926B PDF даташит

Спецификация 9926B изготовлена ​​​​«Tuofeng Semiconductor» и имеет функцию, называемую «Dual N-Channel MOSFET».

Детали детали

Номер произв 9926B
Описание Dual N-Channel MOSFET
Производители Tuofeng Semiconductor
логотип Tuofeng Semiconductor логотип 

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9926B Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET
9926B
Features
6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V
5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta=25
Pulsed Drain Current
Maximum Power Dissipation
TA = 25
TA = 70
Symbol
VDS
VGS
ID
IDM
PD
10 secs
Steady Sate
20
10
6.5
30
2.0 1.25
1.3 0.8
Unit
V
V
A
A
W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot (Drain)
t 10 sec
Steady State
Steady State
* Surface Mounted on 1" X 1"FR4 Board.
Symbol
RthJA
RthJF
Typ
50
80
30
Max Unit
62.5
100 /W
40









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9926B Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
9926B
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Testconditons
VDSS VGS = 0 V, ID = 250 A
IDSS VDS =16V , VGS = 0V
Min Typ Max Unit
20 V
1 uA
Gate-Body Leakage
Gate Threshold Voltage
Drain-Source On-State Resistance *
On-State Drain Current *
Forward Transconductance *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Maximum Continuous Drain-Source Diode
Forward Current
Diode Forward Voltage *
* Pulse test; pulse width 300 s, duty cycle
IGSS VDS = 0V , VGS = 10V
VGS(th) VDS = VGS , ID = 250uA
VGS = 4.5V , ID = 6.5A
rDS(on)
VGS = 2.5V , ID = 5.5A
ID(on) VDS 5V , VGS = 4.5V
gfs VDS = 5V , I D =6.5A
Qg
Qgs VDS = 15V , VGS = 4.5V , ID = 6A
Qgd
td(on)
tr
td(off)
tf
VDD = 15V
ID = 1A , VGS = 4.5V , RG = 6 ,RL =
15
IS
VSD
2 %.
IS = 1.7A, VGS = 0 V
100 nA
0.5 1.0 V
0.020 0.022
0.033 0.035
20 A
9v
13 20
3 nC
3.3
2 35
40 60
ns
50 75
20 30
1A
0.7 1.2 V









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9926B Даташит, Описание, Даташиты
9926B
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
4.5V
25
20
15
10
5
2.5V
2V
VDS=16V, VGS=0V
VGS=1.5V
20
16
12
8
4
VDS=5V
125°C 25°C
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
0
0.4
0.8 1.2 1.6
2
VGS(Volts)
Figure 2: Transfer Characteristics
2.4
45
40
35 VGS=1.8V
30
VGS=2.5V
25
20
VGS=4.5V
15
10
0
5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1.8
ID=7A
1.6 VGS=4.5V
1.4
1.2 VGS=2.5V
VGS=1.8V
1
0.8
0
25 50 75 100 125 150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
60
50
ID=7A
40
125°C
30
20 25°C
10
02468
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
125°C
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.2 0.4 0.6 0.8
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.0










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