8820 PDF даташит
Спецификация 8820 изготовлена «Tuofeng Semiconductor» и имеет функцию, называемую «Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | 8820 |
Описание | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
Производители | Tuofeng Semiconductor |
логотип |
4 Pages
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8820
8820
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The 8820 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V VGS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product 8820 is Pb-free
(meets ROHS & Sony 259 specifications). 8820 is
a Green Product ordering option. 8820 is
electrically identical.
Features
VDS (V) = 20V
ID = 6A (VGS = 10V)
RDS(ON) < 28mΩ (VGS = 4.5V)
RDS(ON) < 38mΩ (VGS = 2.5V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
18
27
36
45
D1/D2
S2
S2
G2
D1
G1 G2
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
20
±10
7
25
1.5
0.96
-55 to 150
D2
S2
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
64
89
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8820
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=6A
VGS=2.5V, ID=4.6A
Min Typ Max Units
20
±12
0.5 0.65
25
V
1 µA
10 µA
V
1.2 V
A
28
mΩ
38
gFS Forward Transconductance
VDS=5V, ID=6A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=4.5V, VDS=10V, ID=7A
VGS=5V, VDS=10V, RL=1.4Ω,
RGEN=3Ω
IF=7A, dI/dt=100A/µs
IF=7A, dI/dt=100A/µs
25
0.75 1
2.5
615
150
120
0.9
8.5 12
1.2
3
7
13
29
11
15
5
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.TF DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. TF RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8820
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
20
3V
4V
VGS =2V
20
VGS=5V
15
10 VGS =1.5V
0
012345
VDS(Volts)
Figure 1: On-Regions Characteristics
10
5
0
0.0
125°C
25°C
0.5 1.0 1.5 2.0
VGS(Volts)
Figure 2: Transfer Characteristics
2.5
50
VGS =1.8V
40
30
20
10
VGS =2.5V
VGS =4.5V
VGS =10V
0
0 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
ID=7A
70
60
50 125°C
40
30
20 25°C
10
0 2 4 6 8 10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.6
VGS=1.8V
ID=2A
1.4 VGS=4.5V
ID=5A
1.2
VGS=2.5V
ID=4A
VGS=10V
1.0 ID=7A
0.8
0
50 100
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
150
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
125°C
25°C
VSD(Volts)
Figure 6: Body-Diode Characteristics
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