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S8205A PDF даташит

Спецификация S8205A изготовлена ​​​​«Tuofeng Semiconductor» и имеет функцию, называемую «Dual N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв S8205A
Описание Dual N-Channel Enhancement Mode Field Effect Transistor
Производители Tuofeng Semiconductor
логотип Tuofeng Semiconductor логотип 

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S8205A Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
N MMOOSFSEFTET
Dual N-Channel Enhancement Mode Field Effect Transistor
S8205A
Features
5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V
rDS(on) = 0.040 @ VGS = 2.5 V.
TSSOP-8
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation TA = 25
TA = 70
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Jumction temperature and Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
R JA
R JC
Tj.Tstg
Rating
20
8
5
20
2.0
1.6
78
40
-55 to +150
Unit
V
V
A
A
W
W
/W
/W
1









No Preview Available !

S8205A Даташит, Описание, Даташиты
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
N MOSMFOETSFET
S8205A
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Testconditons
VDSS VGS = 0 V, ID = 250 A
IDSS
IGSS
VDS = 16V , VGS = 0V
VDS = 0V , VGS = 8V
Gate Threshold Voltage
Drain-Source On-State Resistance *
On-State Drain Current *
Forward Transconductance *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Maximum Continuous Drain-Source Diode
Forward Current
Diode Forward Voltage *
* Pulse test; pulse width 300 s, duty cycle
VGS(th) VDS = VGS , ID = 250uA
rDS(on) VGS = 4.5V , ID = 5A
VGS = 2.5V , ID = 4A
ID(on) VDS = 5V , VGS = 4.5V
gfs VDS = 5V , ID =3A
Ciss
Coss VDS = 10 V, VGS = 0 V,f = 1.0 MHz
Crss
Qg
Qgs VDS = 10V , VGS = 4.5V , ID = 3A
Qgd
td(on)
tr
td(off)
VDD = 10V
ID = 1A , VGS = 4.5V , RG = 6
tf
IS
VSD
2 %.
IS = 1.7 A, VGS = 0 V
Min Typ Max Unit
20 V
1 uA
50 nA
0.5 1.0
0.020 0.025
0.035 0.040
15
11
700
175
85
7 10
1.2
1.9
8 16
10 18
18 29
5 10
V
A
S
pF
pF
pF
nC
ns
1.3 A
0.65 1.2 V
2










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Номер в каталогеОписаниеПроизводители
S8205Diode ( Rectifier )American Microsemiconductor
American Microsemiconductor
S8205ADual N-Channel Enhancement Mode Field Effect TransistorTuofeng Semiconductor
Tuofeng Semiconductor

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