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PDF SDT2P02 Data sheet ( Hoja de datos )
| Número de pieza | SDT2P02 | |
| Descripción | Dual-P Enhancement Mode MOSFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
SDT2P02
-2.2A, -20V, RDS(ON) 200 mΩ
Dual-P Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to assure minimal power loss and heat dissipation.
DFN2x2-6L-J
FEATURES
Low RDS(on) trench technology
Low thermal impedance
Fast switching speed
APPLICATIONS
Battery-powered instruments
Portable computing
Mobile phones
GPS units and media players
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6L-J
3K
Leader Size
7 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Typ. Max.
2.00 BSC.
2.00 BSC.
0.675 0.75 0.80
0.30 Typ.
0.75 0.86
1.1
0.65BSC
REF.
G
H
J
K
L
P
Millimeter
Min. Typ. Max.
0.30 BSC
0.20 BSC
0 -- 0.06
0.15 0.20 0.25
0.20 0.30 0.38
0.52 0.65 0.72
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current@ VGS= -4.5V 1
Pulsed Drain Current 2
Power Dissipation@ TA=25°C 1
TA=25°C
TA=70°C
ID
IDM
PD
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from
Junction to Ambient 1
t≦5 sec
Steady State
RθJA
Rating
-20
±8
-2.2
-1.7
-8.8
1.5
-55~150
83
125
Unit
V
V
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
05-Jul-2016 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SDT2P02.PDF ] | |
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