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PDF 70N03 Data sheet ( Hoja de datos )
| Número de pieza | 70N03 | |
| Descripción | Power-Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 70N03 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
70N03
30 V
8.0 mΩ
70 A
TO-251
3
2
1
Type
70N03
Package
TO-251
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=70 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
70
280
57
70
±20
68
-55 ... +175
55/175/56
A
mJ
A
V
W
°C
1
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
280
10 V
5V
240
200
160
4.5 V
4V
70N03
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
20
3V
18
3.5 V
4V
16
14
12
120 10
80
40
0
0
3.5 V
3V
2.5 V
246
V DS [V]
8
8
6 4.5 V
5V
4 10 V
2
0 40 80 120 160 200
I D [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 40 A; V GS = 10 V
280
240
200
-55 °C
25 °C
175 °C
7
6
160 5
120
4
80
3
40
02
123456
-60 -20 20 60 100 140 180
V GS [V]
T j [°C]
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 70N03.PDF ] | |
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