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Número de pieza | CGY180 | |
Descripción | GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CGY180 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! GaAs MMIC
CGY 180
_________________________________________________________________________________________________________
Datasheet
* Power amplifier for DECT and PCS application
* Fully integrated 3 stage amplifier
* Operating voltage range: 2.7 to 6 V
* Overall power added efficiency 35 %
* Input matched to 50 Ω, simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CGY 180
Marking
CGY 180
Ordering code
(taped)
Q68000-A8882
Package 1)
MW 12
Maximum ratings
Characteristics
Positive supply voltage
Negative supply voltage 2)
Supply current
Maximum input power
Channel temperature
Storage temperature
Total power dissipation (Ts < 81 °C)
Ts: Temperature at soldering point
Pulse peak power
Symbol
VD
VG
ID
Pin,max
TCh
Tstg
Ptot
max. Value
8
-8
1.2
10
150
-55...+150
2.3
PPulse
9.5
Thermal Resistance
Channel-soldering point
RthChS
≤30
1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines
2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR ≠ 0V
Siemens Aktiengesellschaft
pg. 1/15
Unit
V
V
A
dBm
°C
°C
W
W
K/W
21.02.96
HL EH PD 21
1 page GaAs MMIC
CGY 180
_________________________________________________________________________________________________________
DC - characteristics
Input characteristics - typical measured values of stage 1 and 2 , VD1 or VD2=3V
0,26
low current
medium current
high current
0,24
0,22
0,2
0,18
0,16
0,14
0,12
0,1
0,08
0,06
0,04
0,02
0
-4 -3,8 -3,6 -3,4 -3,2 -3 -2,8 -2,6 -2,4 -2,2 -2 -1,8 -1,6 -1,4 -1,2 -1 -0,8 -0,6 -0,4 -0,2 0
VG[V]
Output characteristics - typical measured values of stage 1 and 2
0,22
0,2 0V
0,18 -0.2V
-0.3V
0,16
-0.5V
0,14 -0.7V
-0.8V
0,12 -1.0V
0,1
0,08
-1.2V
-1.3V
-1.5V
0,06 -1.7V
0,04 -1.9V
-2.1V
0,02 -2.3V
-2.5V
0
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2 2,2 2,4 2,6 2,8 3 3,2 3,4 3,6 3,8 4 4,2 4,4 4,6 4,8 5 5,2 5,4 5,6 5,8 6
VD[V]
Siemens Aktiengesellschaft
pg. 5/15
21.02.96
HL EH PD 21
5 Page GaAs MMIC
CGY 180
_________________________________________________________________________________________________________
Test circuit board:
The following impedances of the bias circuit
should be seen from the CGY180 ports:
Γ8= 0.97 / 96°
Γ9= 0.96 / 142°
Γ11= 0.94 / -134°
CGY 180
89
11
Γ8 Γ9
Γ11
(values measured at f=1.89 GHz)
Size: 20 x 25 mm; In, Out: 50 Ohm
Principal circuit:
Vg
1nF
+Vd
1nF 4.7uF 1nF
VTR
68pF
1nF
6.8pF
VG (2)
VD1 (8)
VTR (1)
Control
circuit
VD2 (9)
1.5pF
VD3 (11)
In
Pin (7)
CGY180
GND1 (6)
Pout (11)
Out
GND2 (3,4,5,10)
Siemens Aktiengesellschaft
pg. 11/15
21.02.96
HL EH PD 21
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet CGY180.PDF ] |
Número de pieza | Descripción | Fabricantes |
CGY180 | GaAs MMIC (Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V) | Siemens Semiconductor Group |
CGY181 | GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier) | Siemens Semiconductor Group |
CGY184 | GaAs MMIC (Power amplifier for PCN applications 2.5 W 34dBm output power at 3.5 V) | Siemens Semiconductor Group |
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