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CGY181 PDF даташит

Спецификация CGY181 изготовлена ​​​​«Siemens Semiconductor Group» и имеет функцию, называемую «GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier)».

Детали детали

Номер произв CGY181
Описание GaAs MMIC (Power amplifier for PCN/PCS applications Fully integrated 2 stage amplifier)
Производители Siemens Semiconductor Group
логотип Siemens Semiconductor Group логотип 

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CGY181 Даташит, Описание, Даташиты
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Preliminary Datasheet
* Power amplifier for PCN/PCS applications
* Fully integrated 2 stage amplifier
* Operating voltage range: 2.7 to 6 V
* Overall power added efficiency 35 %
* Input matched to 50 , simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CGY 181
Marking
CGY 181
Ordering code
(8-mm taped)
Q68000-A8883
Package 1)
MW 12
Maximum ratings
Characteristics
Positive supply voltage
Negative supply voltage 2)
Supply current
Channel temperature
Storage temperature
RF input power
Total power dissipation (Ts 81 °C)
Ts: Temperature at soldering point
Symbol
VD
VG
ID
TCh
Tstg
Pin
Ptot
max. Value
9
-8
2
150
-55...+150
25
5
Thermal Resistance
Channel-soldering point
RthChS
14
1) Plastic body identical to SOT 223, dimensions see chapter Package Outlines
2) VG = -8V only in combination with VTR = 0V; VG = -6V while VTR 0V
Unit
V
V
A
°C
°C
dBm
W
K/W
Siemens Aktiengesellschaft
pg. 1/14
01.02.96
HL EH PD 21









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CGY181 Даташит, Описание, Даташиты
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Functional block diagramm:
VG (1)
VD1 (7)
VTR (2)
Control
Circuit
Pin (8)
GND1 (6,9)
connected (shut off mode).
VD2 (11)
Short description of CGY181
operation:
GND2
(3, 4, 5, 10)
Pout (11)
A negative voltage between -4V to -6V
(stabilization not necessary) has to be
connected to the VG-pin, a positive
supply voltage has to be applied to the
VD-pins.
The VTR-pin has to switched to 0V
(GND) during transmit operation. The
MMIC CGY181 is self-biased, the
operating current is adjusted by the
internal control circuit.
In receive mode the VTR-pin is not
Pin #
1
2
3,4,5,10
6,9
7
8
11
12
VG
VTR
GND 2
GND 1
VD1
RFin
VD2,RFout
-
Configuration
Negative voltage at control circuit (-4V...-8V)
Control voltage for transmit mode (0V) or receive mode (open)
RF and DC ground of the 2nd stage
RF and DC ground of the 1st stage
Positive drain voltage of the 1st stage
RF input power
Positive drain voltage of the 2nd stage, RF output power
not connected
DC characteristics
Characteristics
Symbol Conditions
min typ max Unit
Drain current stage 1 IDSS1 VD=3V, VG=0V, VTR n.c. 0.6 0.9 1.2 A
stage 2 IDSS2
2.4 3.5 4.8 A
Drain current with
ID
active current control
VD=3V, VG=-4V, VTR=0V
1.0
A
Transconductance gfs1 VD=3V, ID=350mA
0.28 0.32 -
S
(stage 1 and 2)
gfs2 VD=3V, ID=700mA
1.1 1.3 -
S
Pinch off voltage Vp VD=3V, ID<500µA
-3.8 -2.8 -1.8 V
(all stages)
Siemens Aktiengesellschaft
pg. 2/14
01.02.96
HL EH PD 21









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CGY181 Даташит, Описание, Даташиты
GaAs MMIC
CGY 181
________________________________________________________________________________________________________
Electrical characteristics
(TA = 25°C , f=1.75 GHz, ZS=ZL=50 Ohm, VD=3.6V, VG =-4V, VTR pin connected to
ground, unless otherwise specified)
Characteristics
Symbol
Supply current
Pin= 0 dBm
Negative supply current
(normal operation)
Shut-off current
VTR n.c.
Negative supply current
(shut off mode, VTR pin n.c.)
Small signal gain
Pin = -5dBm
Power Gain
VD=3.6V, Pin = 16 dBm
Power Gain
VD=5V, Pin = 16 dBm
Output Power
VD=3.6V, Pin = 16 dBm
Output Power
VD=5V , Pin = 16 dBm
Overall Power Added Efficiency
VD=3.6V, Pin = 16 dBm
Overall Power Added Efficiency
VD=5V, Pin = 16 dBm
Harmonics (Pin =16dBm)
2f0
VD=3.6V (Pout=31.85dBm) 3f0
Harmonics (Pin =16dBm)
2f0
VD=5V (Pout=31.85dBm) 3f0
Input VSWR VD=3.6V
Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; VD = 3.6V
Third order intercept point
f1=1.7500GHz; f2=1.7502GHz; VD = 5V
IDD
IG
ID
IG
G
G
G
P0
P0
η
η
IP3
IP3
min
-
-
-
-
-
14.5
17.5
30.5
33.5
-
-
-
-
typ
1.2
2
400
10
20.5
15.5
18.5
31.5
34.5
37
35
-44.8
-70
-45.1
-75
1.9:1
41
44
max
-
3
-
-
-
-
-
-
-
-
-
-
-
Unit
A
mA
µA
µA
dB
dB
dB
dBm
dBm
%
%
dBc
dBc
dBm
dBm
All RF-measurements were done in a pulsed mode with a duty cycle of 10% (ton=0.33ms)!
Siemens Aktiengesellschaft
pg. 3/14
01.02.96
HL EH PD 21










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