CGY2010G Datasheet PDF - NXP Semiconductors
| Part Number | CGY2010G | |
| Description | GSM 4 W power amplifiers | |
| Manufacturers | NXP Semiconductors | |
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INTEGRATED CIRCUITS
DATA SHEET
CGY2010G; CGY2011G
GSM 4 W power amplifiers
Objective specification
Supersedes data of 1995 Oct 25
File under Integrated Circuits, IC17
1996 Jul 08
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Philips Semiconductors
GSM 4 W power amplifiers
Objective specification
CGY2010G; CGY2011G
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2010G and CGY2011G are designed to meet the
European Telecommunications Standards Institute (ETSI)
GSM documents, the “ETS 300 577 specification”, which
are defined as follows:
• ton = 542.8 µs
• T = 4.3 ms
• Duty cycle = 1/8
The devices are specifically designed for pulse operation
allowing the use of a LQFP48 plastic package.
Power amplifier
The power amplifier consists of four cascaded gain stages
with an open-drain configuration. Each drain has to be
loaded externally by an adequate reactive circuit which
also has to be a DC path to the supply.
The amplifier bias is set by means of a negative voltage
applied at pins VGG1 and VGG2. This negative voltage must
be present before the supply voltage is applied to the
drains to avoid current overstress for the amplifier.
Power sensor driver
The power sensor driver is a buffer amplifier that delivers
a signal to the DETO output pin which is proportional to the
amplifier power. This signal can be detected by external
diodes for power control purpose. As the sensor signal is
taken from the input of the last stage of the PA, it is isolated
from disturbances at the output by the reverse isolation of
the PA output stage.
Impedance mismatch at the PA output therefore, does not
significantly influence the signal delivered by the power
sensor as this normally occurs when power sense is made
using a directional coupler. Consequently the cost and
space of using a directional coupler are saved.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
SYMBOL
VDD
VGG
Tj(max)
Tstg
Ptot
PARAMETER
positive supply voltage
negative supply voltage
maximum operating junction temperature
IC storage temperature
total power dissipation
MIN.
−
−
−
−
−
MAX.
7
−10
150
150
1.5
UNIT
V
V
°C
°C
W
THERMAL CHARACTERISTICS
General operating conditions applied.
SYMBOL
Rth j-c
PARAMETER
thermal resistance from junction to case; note 1
Note
1. This thermal resistance is measured under GSM pulse conditions.
VALUE
32
UNIT
K/W
1996 Jul 08
5
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CGY2010G electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CGY2010G.PDF Datasheet ] | |
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