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CGY2032TS PDF даташит

Спецификация CGY2032TS изготовлена ​​​​«NXP Semiconductors» и имеет функцию, называемую «DECT 500 mW power amplifier».

Детали детали

Номер произв CGY2032TS
Описание DECT 500 mW power amplifier
Производители NXP Semiconductors
логотип NXP Semiconductors логотип 

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CGY2032TS Даташит, Описание, Даташиты
INTEGRATED CIRCUITS
DATA SHEET
CGY2032TS
DECT 500 mW power amplifier
Product specification
Supersedes data of 1998 Nov 23
File under Integrated Circuits, IC17
1999 Jul 21









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CGY2032TS Даташит, Описание, Даташиты
Philips Semiconductors
DECT 500 mW power amplifier
Product specification
CGY2032TS
FEATURES
Power Amplifier (PA) overall efficiency 55%
27.5 dBm saturated output power at 3.2 V
0 dBm input power
40 dB linear gain
Operation without negative supply
Wide operating temperature range 30 to +85 °C
SSOP16 package.
APPLICATIONS
1.88 to 1.9 GHz transceivers for DECT applications
2 GHz transceivers [Personal Handy phone System
(PHS), Digital Cellular System (DCS) and Personal
Communication Services (PCS)].
GENERAL DESCRIPTION
The CGY2032TS is a GaAs Monolithic Microwave
Integrated Circuit (MMIC) power amplifier specifically
designed to operate from 3.6 V battery supply.
No negative supply voltage is required for operation.
QUICK REFERENCE DATA
SYMBOL
VDD
IDD
Po
Tamb
PARAMETER(1)
positive supply voltage
positive peak supply current
output power
ambient temperature
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
MIN.
30
TYP.
3.2
350
27.5
MAX. UNIT
V
mA
dBm
+85 °C
ORDERING INFORMATION
TYPE
NUMBER
CGY2032TS
NAME
SSOP16
PACKAGE
DESCRIPTION
plastic shrink small outline package; 16 leads; body width 4.4 mm
VERSION
SOT369-1
BLOCK DIAGRAM
1999 Jul 21
handbook, halfpage VDD1 VDD2 VDD3
8
11
RFI
51
CGY2032TS
16
15
10
GND1
2, 3, 4
6, 7 12, 13, 14
GND2 GND3
MGK735
RFO
OPM
Fig.1 Block diagram.
2









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CGY2032TS Даташит, Описание, Даташиты
Philips Semiconductors
DECT 500 mW power amplifier
Product specification
CGY2032TS
PINNING
SYMBOL
VDD3
GND3
GND3
GND3
VDD2
GND2
GND2
VDD1
n.c.
GND1
RFI
GND3
GND3
GND3
OPM
RFO
PIN DESCRIPTION
1 third stage supply voltage
2 third stage ground supply
3 third stage ground supply
4 third stage ground supply
5 second stage supply voltage
6 second stage ground supply
7 second stage ground supply
8 first stage supply voltage
9 not connected
10 first stage ground supply
11 PA input
12 third stage ground supply
13 third stage ground supply
14 third stage ground supply
15 output pre-matching
16 PA output
handbook, halfpage
VDD3 1
GND3 2
16 RFO
15 OPM
GND3 3
14 GND3
GND3 4
13 GND3
CGY2032TS
VDD2 5
12 GND3
GND2 6
11 RFI
GND2 7
10 GND1
VDD1 8
9 n.c.
MGK734
Fig.2 Pin configuration.
FUNCTIONAL DESCRIPTION
Amplifier
The CGY2032TS is a 3-stage GaAs power amplifier
capable of delivering 500 mW (typ.) at 1.9 GHz into a 50
load. Each amplifier stage has an open-drain
configuration. The drains have to be loaded externally by
adequate reactive circuits which must also provide a DC
path to the supply.
The amplifier can be switched off by means of a single
external PNP or PMOS series switch connected between
the battery and the amplifier drains.
This switch can also be used to vary the actual supply
voltage applied to the amplifier and hence, control the
output power.
This device is specifically designed to work with a duty
factor of 50% and can work up to 100% with good thermal
performance printed-circuit boards.
Biasing
Internal biasing is provided inside the amplifier for
class AB operation.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDD
Tj(max)
Ptot
Pi
Tstg
operating supply voltage
maximum operating junction temperature
total power dissipation
input power
storage temperature
CONDITIONS
note 1
note 2
Notes
1. On Philips evaluation board.
2. On Philips evaluation board, Ptot maximum value is 800 mW.
MIN.
55
MAX.
5.2
150
450
15
+125
UNIT
V
°C
mW
dBm
°C
1999 Jul 21
3










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