CGY21 PDF даташит
Спецификация CGY21 изготовлена «Siemens Semiconductor Group» и имеет функцию, называемую «GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier)». |
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Детали детали
Номер произв | CGY21 |
Описание | GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier) |
Производители | Siemens Semiconductor Group |
логотип |
9 Pages
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CGY 21
GaAs MMIC
q Two-stage monolithic microwave IC (MMIC amplifier)
q All gold metallization
q Chip fully passivated
q Operating voltage range: 3 to 6 V
q 50 Ω input/output; RLIN RLOUT > 10 dB
q Gain: 21 dB at 500 MHz
q Low noise figure: 3.9 dB at 500 MHz
q Bandwidth: 2 GHz
q Hermetically sealed package
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code Circuit Diagram (Pin Configuration)
CGY 21 Q68000-A5953
CGY 21
Package1)
TO-12
1 RF output, VS
2 Interstage, VS
3 RF input
4 RF and DC
ground, case
1) For detailed information see chapter Package Outlines.
Semiconductor Group
1
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CGY 21
Maximum Ratings
Parameter
Supply voltage, TC ≤ 80 ˚C
Total power dissipation, TC ≤ 50 ˚C
Channel temperature
Storage temperature range
Symbol
VS
Ptot
Tch
Tstg
Values
Unit
6V
2W
150 ˚C
– 55 … + 150
Thermal Resistance
Channel - case
RthchC
50
K/W
Note: Exceeding any of the maximum ratings may cause permanent damage to the device.
Appropriate handling procedures are required to protect the electrostatic sensitive IC
against degradation due to excess voltage or excess current spikes. Excellent ground
connection of lead 4 and the package (e. g. soldered on microstripline laminate) is
required to achieve guaranteed RF performance and stable operation conditions and
provides adequate heat sink. Low parasitic capacitance of the bias network to port 2
gives optimum gain and flatness. Input and output connections must be DC isolated by
coupling capacitors.
Semiconductor Group
2
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CGY 21
Electrical Characteristics
at TA = 25 ˚C, VS = 4.5 V, RS = RL = 50 Ω, unless otherwise specified,
(for application circuit see next page).
Parameter
Operating current
Power gain
f = 100 MHz to 900 MHz
Gain flatness
f = 100 MHz to 900 MHz
Noise figure
f = 100 MHz to 900 MHz
Input return loss
f = 100 MHz to 900 MHz
Output return loss
f = 100 MHz to 900 MHz
Third order intercept point
two-tone intermodulation test
f1= 806 MHz, f2= 810 MHz,
Po = 10 dBm (both carriers)
1 dB gain compression
f = 100 MHz to 900 MHz
Symbol
min.
Iop –
G 19
Values
typ. max.
160 200
21 –
∆G – 1.5 2
F – 3.9 5.5
RLIN
–
12 9.5
RLOUT
–
12 9.5
IP3 31 32.5 –
P1dB
–
19 –
Unit
mA
dB
dBm
Semiconductor Group
3
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