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Número de pieza | CGY40 | |
Descripción | GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CGY40 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! GaAs MMIC
CGY 40
________________________________________________________________________________________________________
Datasheet
* Single-stage monolithic microwave IC ( MMIC-
amplifier )
* Application range: 100 MHz to 3 GHz
* Gain: 9 dB typ. @ 1.6 GHz
* Low noise figure: 2.7 dB typ. @ 1.6 GHz
* Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1
* Operating voltage range: 3 to 5.5 V
* Individual current control with neg. gate bias
* Hermetically sealed ceramic stripline package
Cerec-X
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(tape and reel)
Circuit Diagram
(Pin Configuration)
CGY 40 40
Q68000-A4444
Package 1)
Cerec-X
Maximum ratings
Drain-voltage
Current control gate voltage
Drain-gate voltage
Input power
Channel temperature
Storage temperature range
Total power dissipation (TS < 82°C) 2)
Symbol
VD
VG
VDG
PIN
TCh
Tstg
Ptot
Value
5.5
-3 ... 0
8.5
16
150
-55...+150
440
Unit
V
V
V
dBm
°C
°C
mW
Thermal resistance
Channel-soldering point 2)
RthChS
155
K/W
Note: Exceeding any of the max. ratings may cause permanent damage to the device. Appropriate handling is
required to protect the electrostatic sensitive MMIC against degradation due to excess voltage or current spikes.
Proper ground connection of leads 2 and 4 ( with min. inductance ) is required to achieve the guaranteed RF
performance, stable operating conditions and adequate cooling.
1) Dimensions see chapter Package Outlines
2) Ts is measured on the source lead at the soldering point to the PCB.
Siemens Aktiengesellschaft
pg. 1/5
11.01.1996
HL EH PD 21
1 page GaAs MMIC
CGY 40
________________________________________________________________________________________________________
Typical Common Source S-Parameters
VG = 0V VD = 4.5 V Z0 = 50 Ω
f
GHz
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
4.2
S11
Mag Ang
0.20 -47
0.16 -49
0.15 -60
0.16 -72
0.15 -87
0.14 -105
0.15 -124
0.15 -139
0.16 -151
0.17 -166
0.18 -176
0.21 173
0.21 163
0.23 154
0.24 146
0.26 140
0.29 136
0.31 127
0.32 123
0.34 118
0.36 115
S21
Mag Ang
3.32 165
3.24 158
3.17 149
3.09 141
3.02 132
2.95 124
2.88 116
2.82 107
2.75 100
2.69
93
2.62
86
2.56
80
2.48
73
2.40
67
2.32
61
2.24
55
2.15
51
2.05
44
1.94
39
1.83
34
1.80
29
S12
Mag Ang
0.14
2
0.14
-2
0.14
-6
0.14
-8
0.13 -10
0.13 -12
0.13 -13
0.12 -14
0.12 -15
0.11 -15
0.11 -15
0.11 -14
0.11 -14
0.11 -14
0.11 -13
0.11 -12
0.11 -14
0.11 -12
0.11 -11
0.11 -11
0.11 -11
S22
Mag Ang
0.09 -150
0.09 148
0.11 117
0.13
97
0.16
84
0.19
76
0.21
68
0.22
60
0.24
54
0.25
48
0.26
41
0.27
37
0.27
32
0.27
28
0.27
24
0.27
20
0.26
18
0.25
17
0.24
14
0.23
10
0.22
6
Siemens Aktiengesellschaft
pg. 5/5
11.01.1996
HL EH PD 21
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet CGY40.PDF ] |
Número de pieza | Descripción | Fabricantes |
CGY40 | GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Application range: 100 MHz to 3 GHz) | Siemens Semiconductor Group |
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