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CHA2063A PDF даташит

Спецификация CHA2063A изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «7-13GHz Low Noise Amplifier».

Детали детали

Номер произв CHA2063A
Описание 7-13GHz Low Noise Amplifier
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHA2063A Даташит, Описание, Даташиты
CHA2063a
7-13GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2063a is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a
PM-HEMT process : 0.25µm gate length,
via holes through the substrate, air bridges
and electron beam gate lithography.
It is supplied in chip form or in an hermetic
leadless ceramic package.
Main Features
Broad band performance 7-13GHz
2.0dB noise figure, 8-13GHz
19dB gain
Low DC power consumption, 40mA
18dBm 3rd order intercept point
Chip size : 1,52 x 1,27 x 0.1mm
Pin Out
1 - NC
2 - NC
3 - RF output
4 - NC
5 - Vdd
6 - RF input
Main Characteristics
Tamb = +25°C, package form
Symbol
NF
G
Parameter
Noise figure, 7-8GHz
Noise figure, 8-13GHz
Gain
G Gain flatness
Min Typ Max Unit
2.5
2.0
3.0
2.5
dB
16 19
dB
± 2.0
dB
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHA20630096 -05-Apr-00
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09









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CHA2063A Даташит, Описание, Даташиты
CHA2063a
Electrical Characteristics
Package form
Tamb = +25°C, Vd = +4V
Symbol
Parameter
Fop Operating frequency range
G Gain
G Gain flatness
NF Noise figure 7-8 Ghz
Noise figure 8-13 GHz
VSWRin Input VSWR
VSWRout Ouput VSWR
P1dB
Output power at 1dB gain
compression F=10 GHz
IP3 3rd order intercept point
Id Drain bias current
7-13GHz Low Noise Amplifier
Test
Condi
tions
Min
7
16
Typ Max
13
19
±2
2.5 3.0
2.0 2.5
2.0:1 2.5:1
2.0:1 2.5:1
8
18
40 60
Unit
Ghz
dB
dB
dB
dBm
dBm
mA
Absolute Maximum Ratings
Tamb = +25°C
Symbol
Parameter
Vd Drain bias voltage (3)
Pin Maximum peak input power overdrive (2)
Top Operating temperature range
Tstg Storage temperature range
Values
5.0
+15
-40 to +85
-55 to +125
Unit
V
dBm
°C
°C
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
(3)See chip biasing option page 9/10
Ref. : DSCHA20630096 -05-Apr-00
2/10 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09









No Preview Available !

CHA2063A Даташит, Описание, Даташиты
7-13GHz Low Noise Amplifier
CHA2063a
Electrical Characteristics
Chip form
Tamb = +25°C, Vd = +4V
Symbol
Parameter
Fop Operating frequency range
G Gain
G Gain flatness
NF Noise figure 7-8 Ghz
Noise figure 8-12 GHz
VSWRin Input VSWR
VSWRout Ouput VSWR
P1dB
Output power at 1dB gain
compression F=10 GHz
IP3 3rd order intercept point
Id Drain bias current
Test
Condi
tions
(1)
Min
7
17
(1)
(1)
Typ Max Unit
19
±2
2.5
2.0
2.0:1
2.0:1
8
18
40
12
3.0
2.5
3.0:1
3.0:1
80
Ghz
dB
dB
dB
dBm
dBm
mA
(1) These values are representative of on-wafer measurements that are made without
bonding wires at the RF ports. When the chip is connected with typical 0.3 nH input and
output bonding wires, the indicated parameter values are close to those of the CHA2063a
packaged product.
Ref. : DSCHA20630096 -05-Apr-00
3/10 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09










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Номер в каталогеОписаниеПроизводители
CHA2063A7-13GHz Low Noise AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors

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