HM5N60 PDF даташит
Спецификация HM5N60 изготовлена «H&M Semiconductor» и имеет функцию, называемую «N-CHANNEL MOSFET». |
|
Детали детали
Номер произв | HM5N60 |
Описание | N-CHANNEL MOSFET |
Производители | H&M Semiconductor |
логотип |
11 Pages
No Preview Available ! |
N 沟道增强型场效应晶体管
R N-CHANNEL MOSFET
HM5N60
主要参数 MAIN CHARACTERISTICS
封装 Package
ID .0 A
VDSS 600 V
Rdson(@Vgs=10V) 2.4Ω
Qg 13.3nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 9pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 9pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
订货信息 ORDER MESSAGE
订货型号
印记
封装
Order codes Marking Package
HMN60I HMN60I IPAK
HM N60K HMN60K DPAK
HMN60
HMN60 TO-220C
HM N60F HMN60F TO-220MF
无卤素
Halogen Free
NO
NO
NO
NO
包装
Packaging
Tube
Tube
Tube
Tube
器件重量
Device Weight
0.35 g(typ)
0.30 g(typ)
2.15 g(typ)
2.20 g(typ)
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
1/11
No Preview Available ! |
R
绝对最大额定值 ABSOLUTE RATINGS (Tc=25℃)
HM5N60
项目
Parameter
符号
Symbol
HM5N60I/K
数值
Value
HM5N60
HM5N60F
最高漏极-源极直流电压
Drain-Source Voltage
VDSS
连续漏极电流
Drain Current -continuous
ID
T=25℃
T=100℃
最大脉冲漏极电流(注 1)
Drain Current - pulse
(note 1)
IDM
最高栅源电压
Gate-Source Voltage
VGSS
单脉冲雪崩能量(注 2)
Single Pulsed Avalanche
Energy
EAS
note 2)
雪崩电流(注 1)
Avalanche Current
(note 1)
IAR
重复雪崩能量(注 1)
Repetitive Avalanche Current
(note 1)
EAR
二极管反向恢复最大电压变化
速率(注 3)
Peak Diode Recovery
dv/dt
dv/dt (note 3)
耗散功率
Power Dissipation
PD
TC=25℃
-Derate
above
51
0.39
25℃
最高结温及存储温度
Operating and Storage
Temperature Range
TJ,TSTG
引线最高焊接温度
Maximum Lead Temperature
for Soldering Purposes
TL
*漏极电流由最高结温限制
*Drain current limited by maximum junction temperature
600
5.0
2.5
16
±30
240
5.0
10.0
5.5
100
0.80
-55~+150
300
5.0*
2.5*
16*
33
0.26
单
位
Uni
t
V
A
A
A
V
mJ
A
mJ
V/n
s
W
W/
℃
℃
℃
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
2/11
No Preview Available ! |
R
电特性 ELECTRICAL CHARACTERISTICS
HM5N60
项目
符号
测试条件
最小 典型最大单 位
Parameter
Symbol
Tests conditions
Min Typ Max Units
关态特性 Off –Characteristics
漏-源击穿电压
Drain-Source Voltage
BVDSS ID=250μA, VGS=0V
600 - - V
击穿电压温度特性
Breakdown Voltage Temperature
Coefficient
ΔBVDSS/Δ ID=250μA,
TJ 25℃
referenced
to
-
0.65
-
V/℃
零栅压下漏极漏电流
Zero Gate Voltage Drain Current
IDSS
正向栅极体漏电流
Gate-body leakage current,
forward
IGSSF
VDS=600V,VGS=0V,
TC=25℃
VDS=480V, TC=125℃
VDS=0V, VGS =30V
- - 10 μA
- - 100 μA
- - 100 nA
反向栅极体漏电流
Gate-body leakage current,
reverse
IGSSR
VDS=0V, VGS =-30V
- - -100 nA
通态特性 On-Characteristics
阈值电压
Gate Threshold Voltage
VGS(th)
VDS = VGS , ID=250μA
2.0 - 4.0 V
静态导通电阻
Static Drain-Source
On-Resistance
RDS(ON) VGS =10V , ID=2A
- 1.7 2.4 Ω
正向跨导
Forward Transconductance
gfs
动态特性 Dynamic Characteristics
输入电容
Input capacitance
Ciss
输出电容
Output capacitance
Coss
VDS = 40V , ID=2A(note 4) - 4.7 -
S
VDS=25V,
VGS =0V,
f=1.0MHZ
- 490 642 pF
- 95 124 pF
反向传输电容
Reverse transfer capacitance
Crss
- 9 12 pF
版本:201007A
Shenzhen H&M Semiconductor Co.Ltd
http://www.hmsemi.com
3/11
Скачать PDF:
[ HM5N60.PDF Даташит ]
Номер в каталоге | Описание | Производители |
HM5N60 | N-CHANNEL MOSFET | H&M Semiconductor |
HM5N60 | N-CHANNEL MOSFET | H&M Semiconductor |
HM5N60F | N-CHANNEL MOSFET | H&M Semiconductor |
HM5N60I | 600V N-Channel MOSFET | H&M Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |