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CHA4092REF PDF даташит

Спецификация CHA4092REF изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «20-30GHz High Power Amplifier».

Детали детали

Номер произв CHA4092REF
Описание 20-30GHz High Power Amplifier
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHA4092REF Даташит, Описание, Даташиты
CHA4092
20-30GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA4092 is a high gain broadband three-
stage balanced monolithic power amplifier. It is
designed for a wide range of applications, from
military to commercial communication systems.
The circuit is manufactured with a PM-HEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
þ Broadband performances : 20-30GHz
þ 22 dBm output power ( 1dB gain comp. )
þ 17 dB ± 1.5 dB gain
þ Chip size : 1.65 X 2.15 X 0.10 mm
Typical on wafer measurements :
20
15 Gain
10
5
0
-5
-10 IN
-15
-20
-25 OUT
-30
15 20 25 30
Frequency (GHz)
35
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
P1dB Output power at 1dB gain compression
Id Bias current
Min Typ Max Unit
20 30 GHz
16 17
dB
22 dBm
700 900 mA
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA40928021
1/4 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
http://www.Datasheet4U.com









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CHA4092REF Даташит, Описание, Даташиты
CHA4092
20-30GHz High Power Amplifier
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd1,2,3 = 3.5Volts
Symbol
Parameter
Min
Fop Operating frequency range (1)
20
G Small signal gain (1) (2)
16
G Small signal gain flatness (1) (2)
Is Reverse isolation (1)
P1db Pulsed Output power at 1dB gain compression (1)
VSWRin Input VSWR (1)
VSWRout Output VSWR (1)
Id Bias current
Typ
17
± 1.5
30
22
700
Max
30
2.0:1
2.0:1
900
Unit
GHz
dB
dB
dB
dBm
mA
(1) These values are representative of on-wafer measurements that are made without bonding
wires at the RF ports. In the case of a jig or a module CW mode operation, the typical
output power may be around 2dB less.
(2) Vd1,2,3 = 2Volts
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Vd
Id
Vg
Ta
Tstg
Parameter
Drain bias voltage
Drain bias current
Gate bias voltage
Operating temperature range
Storage temperature range
Values
4
1200
-2 to +0.4
-40 to +85
-55 to +155
Unit
V
mA
V
°C
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHA40928021
2/4 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
http://www.Datasheet4U.com









No Preview Available !

CHA4092REF Даташит, Описание, Даташиты
20-30GHz High Power Amplifier
CHA4092
Bias Conditions : Tamb = +25°C, Vd = 3.5Volt, Vg = -0.2Volt.
25
20 Gain
15
10
5
0
-5
-10
-15
OUT
-20
15
IN
20
25
30
Frequency (GHz)
35
24
20
16
12
8
4
0
-15
Gain (dB)
Pout (dBm)
Freq= 20 GHz
-10 -5
0
Input power (dBm)
5
10
24
20 Gain (dB)
16
12 Pout (dBm)
8
4
Freq= 24 GHz
0
-15 -10
-5
0
5
Input power (dBm)
24
20 Gain (dB)
16
12
Pout (dBm)
8
4
Freq= 30 GHz
0
-15 -10
-5
0
5
Input power (dBm)
Ref. : DSCHA40928021
3/4 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
http://www.Datasheet4U.com










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Номер в каталогеОписаниеПроизводители
CHA4092REF20-30GHz High Power AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors

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