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NPT2020-SMB2 PDF даташит

Спецификация NPT2020-SMB2 изготовлена ​​​​«MA-COM» и имеет функцию, называемую «GaN Wideband Transistor».

Детали детали

Номер произв NPT2020-SMB2
Описание GaN Wideband Transistor
Производители MA-COM
логотип MA-COM логотип 

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NPT2020-SMB2 Даташит, Описание, Даташиты
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Features
GaN on Si HEMT Depletion Mode Transistor
Suitable for Linear and Saturated Applications
Tunable from DC - 3.5 GHz
48 V Operation
13.5 dB Gain at 3.5 GHz
55 % Drain Efficiency at 3.5 GHz
100 % RF Tested
Standard package with bolt down flange
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2020 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 50 W (47 dBm) in an industry
standard surface mount package.
The NPT2020 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Rev. V1
Functional Schematic
RFIN / VG 1
2 RFOUT / VD
3
Flange
Ordering Information
Part Number
Package
NPT2020
Bulk Quantity
NPT2020-SMBPPR
Custom Sample Board1
NPT2020-SMB2
1250-1850 MHz
Sample Board
1. When ordering, specify application requirements (frequency,
linearity, etc.)
Pin Configuration
Pin No.
Pin Name
Function
1 RFIN / VG RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Flange2
Ground / Source
2. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support









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NPT2020-SMB2 Даташит, Описание, Даташиты
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Rev. V1
RF Electrical Specifications: TA = 25 °C, VDS = 48 V, IDQ = 350 mA
Parameter
Test Conditions
Symbol Min.
Typ. Max. Units
Small Signal Gain
CW, 3.5 GHz
GSS - 14.5 - dB
Saturated Output Power
CW, 3.5 GHz
PSAT
-
48
- dBm
Drain Efficiency at Saturation
CW, 3.5 GHz
SAT
-
60
-%
Power Gain
3.5 GHz, POUT = 50 W
GP 12 13.5 - dB
Drain Efficiency
3.5 GHz, POUT = 50 W
50 55 - %
Ruggedness: Output Mismatch
All phase angles
VSWR = 10:1, No Device Damage
DC Electrical Characteristics: TA = 25 °C
Parameter
Test Conditions
Symbol
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
On Resistance
Saturated Drain Current
VGS = -8 V, VDS = 160 V
VGS = -8 V, VDS = 0 V
VDS = 48 V, ID = 14 mA
VDS = 48 V, ID = 350 mA
VDS = 2 V, ID = 105 mA
VDS = 7 V pulsed, pulse width 300 µs
IDLK
IGLK
VT
VGSQ
RON
ID,MAX
Min.
-
-
-2.5
-2.1
-
-
Typ.
-
-
-1.5
-1.2
0.34
8.2
Max.
14
7
-0.5
-0.3
-
-
Units
mA
mA
V
V
A
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support









No Preview Available !

NPT2020-SMB2 Даташит, Описание, Даташиты
NPT2020
GaN Wideband Transistor 48 V, 50 W
DC - 3.5 GHz
Absolute Maximum Ratings3,4,5
Parameter
Drain Source Voltage, VDS
Gate Source Voltage, VGS
Gate Current, IG
Junction Temperature, TJ
Operating Temperature
Absolute Maximum
160 V
-10 to 3 V
28 mA
+200°C
-4C to +55°C
Storage Temperature
-65°C to +150°C
3. Exceeding any one or combination of these limits may cause permanent damage to this device.
4. MACOM does not recommend sustained operation near these survivability limits.
5. Operating at nominal conditions with TJ ≤ 200°C will ensure MTTF > 1 x 106 hours.
Rev. V1
Thermal Characteristics6
Parameter
Test Conditions
Symbol Typical Units
Thermal Resistance
VDS = 48 V, TJ = 200°C
RJC
2.1 °C/W
6. Junction temperature (TJ) measured using IR Microscopy. Case temperature measured using thermocouple
embedded in heat-sink.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Nitride Circuits are sensitive to electrostatic
discharge (ESD) and can be damaged by static
electricity. Proper ESD control techniques should
be used when handling these HBM Class 1A
devices.
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support










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Номер в каталогеОписаниеПроизводители
NPT2020-SMB2GaN Wideband TransistorMA-COM
MA-COM

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