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PDF NPT2010 Data sheet ( Hoja de datos )
| Número de pieza | NPT2010 | |
| Descripción | GaN HEMT | |
| Fabricantes | Nitronex | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NPT2010 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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NPT2010
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications
Tunable from DC-2.2 GHz
48V Operation
Industry Standard Package
High Drain Efficiency (>60%)
Applications
Defense Communications
Land Mobile Radio
Avionics
Wireless Infrastructure
ISM Applications
VHF/UHF/L-Band Radar
DC-2.2 GHz
100W
GaN HEMT
Product Description
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 100W
(50 dBm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 600mA, TC= 25°C
Symbol Parameter
Min
GSS Small-signal Gain
-
PSAT
Saturated Output Power
-
SAT Efficiency at Saturated Output Power
GP Gain at POUT = 95W
Drain Efficiency at POUT = 95W
-
13.5
52.5
VDS Drain Voltage
-
Ruggedness: Output Mismatch, all phase angles
Typ Max
17 -
Units
dB
50.5 - dBm
64 - %
15 - dB
61 - %
48 -
V
VSWR = 10:1, No Device Damage
Page 1
NDS-034 Rev. 1, 052413
1 page  
NPT2010
Typical Performance in 2.15 GHz Narrowband Circuit
(CW, VDS=48V, IDQ=600mA, f=2.15GHz, TC=25C, unless otherwise noted)
Figure 5. Electrical Schematic of 2.15 GHz Narrowband Circuit for NPT2010
(For RF Tuning details see Component Placement Diagram Figure 4)
Figure 6: Gain vs. POUT
Figure 7: Drain Efficiency vs. POUT
Figure 8: Quiescent VGS vs. Temperature
Page 5
Figure 9: Power De-rating Curve
(TJ = 225°C, TC > 25°C)
NDS-034 Rev. 1, 052413
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NPT2010.PDF ] | |
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