NSVMUN5137DW1T1G PDF даташит
Спецификация NSVMUN5137DW1T1G изготовлена «ON Semiconductor» и имеет функцию, называемую «Dual PNP Bias Resistor Transistors». |
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Детали детали
Номер произв | NSVMUN5137DW1T1G |
Описание | Dual PNP Bias Resistor Transistors |
Производители | ON Semiconductor |
логотип |
8 Pages
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MUN5137DW1,
NSBA144WDXV6,
NSBA144WDP6
Dual PNP Bias Resistor
Transistors
R1 = 47 kW, R2 = 22 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5137DW1T1G
SOT−363
3,000 / Tape & Reel
NSVMUN5137DW1T1G
SOT−363
3,000 / Tape & Reel
NSBA144WDXV6T1G
SOT−563
4,000 / Tape & Reel
NSBA144WDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 1
1
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PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
0P M G
G
1
SOT−363
CASE 419B
0P M G
1G
SOT−563
CASE 463A
MG
1G
SOT−963
CASE 527AD
0P/J
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTA144WD/D
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MUN5137DW1, NSBA144WDXV6, NSBA144WDP6
THERMAL CHARACTERISTICS
Characteristic
Symbol
MUN5137DW1 (SOT−363) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
MUN5137DW1 (SOT−363) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 2)
(Note 1)
(Note 2)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
RqJA
Thermal Resistance,
Junction to Lead
(Note 1)
(Note 2)
RqJL
Junction and Storage Temperature Range
NSBA144WDXV6 (SOT−563) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
NSBA144WDXV6 (SOT−563) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 1)
(Note 1)
PD
Thermal Resistance,
Junction to Ambient
(Note 1)
RqJA
Junction and Storage Temperature Range
NSBA144WDP6 (SOT−963) One Junction Heated
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
TJ, Tstg
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
NSBA144WDP6 (SOT−963) Both Junction Heated (Note 3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
Thermal Resistance,
Junction to Ambient
(Note 4)
(Note 5)
RqJA
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. Both junction heated values assume total power is sum of two equally powered channels.
4. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
5. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
TJ, Tstg
Max Unit
187 mW
256
1.5 mW/°C
2.0
670 °C/W
490
250
385
2.0
3.0
493
325
188
208
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
357 mW
2.9 mW/°C
°C/W
350
500
4.0
250
−55 to +150
mW
mW/°C
°C/W
°C
231 mW
269
1.9 mW/°C
2.2
540 °C/W
464
339
408
2.7
3.3
369
306
−55 to +150
mW
mW/°C
°C/W
°C
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MUN5137DW1, NSBA144WDXV6, NSBA144WDP6
ELECTRICAL CHARACTERISTICS (TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
−
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
−
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO
50
Collector−Emitter Breakdown Voltage (Note 6)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
ON CHARACTERISTICS
DC Current Gain (Note 6)
(IC = 5.0 mA, VCE = 10 V)
hFE 80
Collector−Emitter Saturation Voltage (Note 6)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
−
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
−
Input Voltage (on)
(VCE = 0.2 V, IC = 3.0 mA)
Vi(on)
−
Output Voltage (on)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
VOL
−
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
VOH
4.9
Input Resistor
R1 32.9
Resistor Ratio
6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
R1/R2
1.7
Typ
−
−
−
−
−
140
−
1.7
2.7
−
−
47
2.1
Max
100
500
0.13
−
−
−
0.25
−
−
0.2
−
61.1
2.6
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
400
350
300
250
200
(1) (2) (3)
150
(1) SOT−363; 1.0 x 1.0 inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm2, 1 oz. copper trace
100
50
0
−50 −25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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