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PDF HMC1132 Data sheet ( Hoja de datos )
| Número de pieza | HMC1132 | |
| Descripción | Power Amplifier | |
| Fabricantes | Analog Devices | |
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Data Sheet
1 Watt, GaAs pHEMT MMIC
Power Amplifier, 27 GHz to 32 GHz
HMC1132
FEATURES
Saturated output power (PSAT): 30.5 dBm at 22% power
added efficiency (PAE)
High output IP3: 35 dBm
High gain: 22 dB
DC supply: 6 V at 600 mA
No external matching required
32-lead, 5 mm × 5 mm LFCSP package
APPLICATIONS
Point-to-point radios
Point-to-multipoint radios
VSAT and SATCOM
Military and space
GENERAL DESCRIPTION
The HMC1132 is a four-stage, GaAs pHEMT MMIC, 1 watt
power amplifier that operates between 27 GHz and 32 GHz.
The HMC1132 provides 22 dB of gain and 30.5 dBm of
saturated output power at 22% PAE from a 6 V power supply.
The HMC1132 exhibits excellent linearity and it is optimized
for high capacity, point-to-point and point-to-multipoint radio
FUNCTIONAL BLOCK DIAGRAM
GND 1
NC 2
NC 3
GND 4
RFIN 5
GND 6
NC 7
GND 8
HMC1132
24 GND
23 NC
22 NC
21 GND
20 RFOUT
19 GND
18 NC
17 GND
PACKAGE
BASE
Figure 1.
systems. The amplifier configuration and high gain make it an
excellent candidate for last stage signal amplification before the
antenna.
The HMC1132 amplifier input/outputs (I/Os) are internally
matched to 50 Ω. The device is supplied in a compact, leadless
QFN, 5 mm × 5 mm surface-mount package.
Rev. 0
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalog Devicesforitsuse,norforanyinfringementsofpatentsorother
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC1132
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Voltage Bias
RF Input Power (RFIN)1
Channel Temperature
Continuous PDISS (T = 85°C) (Derate 61 mw/°C
Above 85°C)
Thermal Resistance (RTH) Junction to Ground
Paddle
Maximum Peak Reflow Temperature
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity (Human Body Model)
Rating
6.5 V
18 dBm
175°C
5.49 W
16.4°C/W
260°C
−40°C to +150°C
−40°C to +85°C
Class 0, passed
150 V
1 Maximum PIN is limited to 18 dBm or thermal limits constrained by maximum
power dissipation (see Figure 31), whichever is lower.
Data Sheet
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. 0 | Page 4 of 14
5 Page 
HMC1132
THEORY OF OPERATION
The architecture of the HMC1132 power amplifier is shown in
Figure 32. The amplifier consists of a cascade of four, single-
stage amplifiers. This approach provides a high P1dB as well as
a high gain that is flat across the operating frequency range.
VDD1 provides drain bias to the first three gain stages, whereas
VDD1
RFIN
Data Sheet
VDD2 provides drain bias to the fourth gain stage. VGG provides
gate bias to all four gain stages, allowing control of the total
quiescent drain current. RFIN and RFOUT provide dc paths to
GND as a way of increasing the overall ESD robustness of the
device.
VDD2
RFOUT
VGG
Figure 32. Architecture and Simplified Block Diagram
Rev. 0 | Page 10 of 14
11 Page | ||
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