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PDF GS82582S36GE Data sheet ( Hoja de datos )

Número de pieza GS82582S36GE
Descripción 288Mb SigmaSIO DDR-II Burst of 2 SRAM
Fabricantes GSI Technology　
Logotipo GSI Technology Logotipo



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No Preview Available ! GS82582S36GE Hoja de datos, Descripción, Manual

GS82582S18/36GE-400/375/333/300/250
165-Bump BGA
Commercial Temp
Industrial Temp
288Mb SigmaSIOTM DDR-II
Burst of 2 SRAM
400 MHz–250 MHz
1.8 V VDD
1.8 V and 1.5 V I/O
Features
• Simultaneous Read and Write SigmaSIO™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• DLL circuitry for wide output data valid window and future
frequency scaling
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ mode pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• RoHS-compliant 165-bump BGA package
SigmaSIO™ Family Overview
GS82582S18/36GE are built in compliance with the SigmaSIO
DDR-II SRAM pinout standard for Separate I/O synchronous
SRAMs. They are 301,989,888-bit (288Mb) SRAMs. These
are the first in a family of wide, very low voltage HSTL I/O
SRAMs designed to operate at the speeds needed to implement
economical high performance networking systems.
Clocking and Addressing Schemes
A Burst of 2SigmaSIO DDR-II SRAM is a synchronous
device. It employs dual input register clock inputs, K and K.
The device also allows the user to manipulate the output
register clock input quasi independently with dual output
register clock inputs, C and C. If the C clocks are tied high, the
K clocks are routed internally to fire the output registers
instead. Each Burst of 2SigmaSIO DDR-II SRAM also
supplies Echo Clock outputs, CQ and CQ, which are
synchronized with read data output. When used in a source
synchronous clocking scheme, the Echo Clock outputs can be
used to fire input registers at the data’s destination.
Each internal read and write operation in a SigmaSIO DDR-II
B2 RAM is two times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaSIO DDR-II B2 is always one address pin less
than the advertised index depth (e.g., the 16M x 18 has an 8M
addressable index).
Parameter Synopsis
tKHKH
tKHQV
-400
2.5 ns
0.45 ns
-375
2.66 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
Rev: 1.04 4/2016
1/31
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2012, GSI Technology

1 page




GS82582S36GE pdf
GS82582S18/36GE-400/375/333/300/250
Background
Separate I/O SRAMs, like SigmaQuad SRAMs, are attractive in applications where alternating reads and writes are needed. On the
other hand, Common I/O SRAMs like the SigmaCIO family are popular in applications where bursts of read or write traffic are
needed. The SigmaSIO SRAM is a hybrid of these two devices. Like the SigmaQuad family devices, the SigmaSIO features a
separate I/O data path, offering the user independent Data In and Data Out pins. However, the SigmaSIO devices offer a control
protocol like that offered on the SigmaCIO devices. Therefore, while SigmaQuad SRAMs allow a user to operate both data ports at
the same time, they force alternating loads of read and write addresses. SigmaSIO SRAMs allow continuous loads of read or write
addresses like SigmaCIO SRAMs, but in a separate I/O configuration.
Like a SigmaQuad SRAM, a SigmaSIO DDR-II SRAM can execute an alternating sequence of reads and writes. However, doing
so results in the Data In port and the Data Out port stalling with nothing to do on alternate transfers. A SigmaQuad device would
keep both ports running at capacity full time. On the other hand, the SigmaSIO device can accept a continuous stream of read
commands and read data or a continuous stream of write commands and write data. The SigmaQuad device, by contrast, restricts
the user from loading a continuous stream of read or write addresses. The advantage of the SigmaSIO device is that it allows twice
the random address bandwidth for either reads or writes than could be acheived with a SigmaQuad version of the device.
SigmaDDR (CIO) SRAMs offer this same advantage, but do not have the separate Data In and Data Out pins offered on the
SigmaSIO SRAMs. Therefore, SigmaSIO devices are useful in psuedo dual port SRAM applications where communication of
burst traffic between two electrically independent busses is desired.
Each of the three SigmaQuad Family SRAMs—SigmaQuad, SigmaDDR, and SigmaSIO—supports similar address rates because
random address rate is determined by the internal performance of the RAM. In addition, all three SigmaQuad Family SRAMs are
based on the same internal circuits. Differences between the truth tables of the different devices proceed from differences in how
the RAM’s interface is contrived to interact with the rest of the system. Each mode of operation has its own advantages and
disadvantages. The user should consider the nature of the work to be done by the RAM to evaluate which version is best suited to
the application at hand.
Burst of 2 SigmaSIO DDR-II SRAM DDR Read
The status of the Address Input, R/W, and LD pins are sampled at each rising edge of K. LD high causes chip disable. A high on
the R/W pin begins a read cycle. The two resulting data output transfers begin after the next rising edge of the K clock. Data is
clocked out by the next rising edge of the C if it is active. Otherwise, data is clocked out at the next rising edge of K. The next data
chunk is clocked out on the rising edge of C, if active. Otherwise, data is clocked out on the rising edge of K.
Burst of 2 SigmaSIO DDR-II SRAM DDR Write
The status of the Address Input, R/W, and LD pins are sampled at each rising edge of K. LD high causes chip disable. A low on the
R/W pin, begins a write cycle. Data is clocked in by the next rising edge of K and then the rising edge of K.
Rev: 1.04 4/2016
5/31
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2012, GSI Technology

5 Page





GS82582S36GE arduino
GS82582S18/36GE-400/375/333/300/250
x36 Byte Write Enable (BWn) Truth Table
BW3
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
BW2
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
BW1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
BW0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
D27–D35
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Data In
Data In
Data In
Data In
Data In
Data In
Data In
Data In
D18–D26
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Data In
Data In
Data In
Data In
Don’t Care
Don’t Care
Don’t Care
Don’t Care
Data In
Data In
Data In
Data In
x18 Byte Write Enable (BWn) Truth Table
BW0 BW1
11
01
10
00
D0–D8
Don’t Care
Data In
Don’t Care
Data In
D9–D17
Don’t Care
Don’t Care
Data In
Data In
Don’t Care
Don’t Care
Data In
Data In
Don’t Care
Don’t Care
Data In
Data In
Don’t Care
Don’t Care
Data In
Data In
D0–D8
Don’t Care
Data In
Don’t Care
Data In
Don’t Care
Data In
Don’t Care
Data In
Don’t Care
Data In
Don’t Care
Data In
Don’t Care
Data In
Don’t Care
Data In
D9–D17
Don’t Care
Don’t Care
Data In
Data In
Rev: 1.04 4/2016
11/31
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2012, GSI Technology

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