CJ3139K PDF даташит
Спецификация CJ3139K изготовлена «ZPSEMI» и имеет функцию, называемую «P-Channel MOSFET». |
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Детали детали
Номер произв | CJ3139K |
Описание | P-Channel MOSFET |
Производители | ZPSEMI |
логотип |
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CJ3139K
SOT-723 Plastic-Encapsulate MOSFETS
CJ3139K P-Channel MOSFET
SOT-723
FEATURES
z Lead Free Product is Acquired
z Surface Mount Package
z P-Channel Switch with Low RDS(on)
z Operated at Low Logic Level Gate Drive
APPLICATION
z Load/Power Switching
z Interfacing, Logic Switching
z Battery Management for Ultra Small Portable Electronics
1. GATE
2. SOURCE
3. DRAIN
MARKING: KD
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10μs)
Power Dissipation (note 1)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8” from case for 10 s)
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
TL
Value
-20
±12
-0.66
-1.2
150
833
150
-55~+150
260
Unit
V
V
A
A
mW
℃/W
℃
℃
℃
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B
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CJ3139K
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS VDS =-20V,VGS = 0V
Gate-body leakage current
IGSS VGS =±12V, VDS = 0V
Gate threshold voltage (note 2)
Drain-source on-resistance (note 2)
VGS(th)
RDS(on)
VDS =VGS, ID =-250µA
VGS =-4.5V, ID =-1A
VGS =-2.5V, ID =-0.8A
VGS =-1.8V, ID =-0.5A
Forward transconductance (note 2)
gFS VDS =-10V, ID =-0.54A
Diode forward voltage
VSD IS=-0.5A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =-16V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time (note 3)
td(on)
Turn-on rise time (note 3)
Turn-off delay time (note3)
Turn-off fall time (note 3)
tr
td(off)
tf
VGS=-4.5V,VDS=-10V,
ID =-200mA,RGEN=10Ω
Notes :
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
-20 V
-1 µA
20 µA
-0.35
-1.1 V
520 mΩ
700 mΩ
950 mΩ
1.2 S
-1.2 V
113 170
15 25
9 15
pF
pF
pF
9 ns
5.8 ns
32.7 ns
20.3 ns
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CJ3139K
Output Characteristics
-3.0
V =-10V
GS
-2.5
V =-4.5V
GS
V =-3V
GS
-2.0
V =-2.5V
-1.5 GS
-1.0
-0.5
-0.0
-0
V =-1.5V
GS
-1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE V (V)
DS
-5
2.0
T =25℃
a
Pulsed
1.6
1.2
0.8
R
DS(ON)
——
I
D
V =-1.8V
GS
V =-2.5V
GS
0.4
0.0
-0.0
-3
-1
V =-4.5V
GS
-0.4 -0.8 -1.2
DRAIN CURRENT I (A)
D
-1.6
I
S
——
V
SD
-2.0
-0.1
-0.01
-1E-3
-1E-4
-0.4
-0.8 -1.2 -1.6
SOURCE TO DRAIN VOLTAGE V (V)
SD
-2.0
Transfer Characteristics
-2.0
V =-5.0V
DS
Pulsed
-1.6 T =25℃
a
-1.2
T =100℃
a
-0.8
-0.4
-0.0
-0.0
-0.5 -1.0 -1.5 -2.0 -2.5
GATE TO SOURCE VOLTAGE V (V)
GS
-3.0
R
DS(ON)
——
V
GS
2.0
T =25℃
a
Pulsed
1.6
1.2
0.8
0.4
0.0
-1
I =-0.8A
D
-2 -3 -4 -5
GATE TO SOURCE VOLTAGE V (V)
GS
-6
Threshold Voltage
-0.8
-0.7
I =-250uA
D
-0.6
-0.5
-0.4
25
50 75 100
JUNCTION TEMPERATURE T (℃)
J
125
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