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PDF CJ3401 Data sheet ( Hoja de datos )
| Número de pieza | CJ3401 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | ZPSEMI | |
| Logotipo |  |
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CJ3401
Feature
-30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V.
RDS(ON) = 70mΩ(MAX) @VGS = -4.5V.
RDS(ON) =120mΩ(MAX) @VGS = -2.5V.
Super High dense cell design for extremely low RDS(ON)
Reliable and Rugged
SOT-23 for Surface Mount Package
P-Channel Enhancement Mode MOSFET
Applications
SOT-23
● Power Management
Portable Equipment and Battery Powered Systems.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TA=25℃ Unless Otherwise noted
Symbol
VDS
VGS
ID
Electrical Characteristics
Parameter
Off Characteristics
Drain to Source Breakdown Voltage
TA=25℃ Unless Otherwise noted
Symbol
Test Conditions
BVDSS
VGS=0V, ID=-250μA
Zero-Gate Voltage Drain Current
IDSS
VDS=-24V, VGS=0V
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
IGSSF
IGSSR
VGS=12V, VDS=0V
VGS=-12V, VDS=0V
On Characteristics
Gate Threshold Voltage
VGS(th)
VGS= VDS, ID=-250µA
Static Drain-source On-Resistance
RDS(ON)
VGS =-10V, ID =-4.2A
VGS =-4.5V, ID =-4.0A
VGS =-2.5V, ID =-1.0A
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=-1.0A
Limit
-30
±12
-4.2
Units
V
V
A
Min
-30
-
-
-
Typ.
-
-
-
-
Max
-
-1
100
-100
Units
V
μA
nA
nA
-0.7 - -1.3 V
- 50 55 mΩ
- 60 70 mΩ
- 80 120 mΩ
-1.0 V
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| PDF Descargar | [ Datasheet CJ3401.PDF ] | |
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