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CJ502K PDF даташит

Спецификация CJ502K изготовлена ​​​​«ZPSEMI» и имеет функцию, называемую «P-CHANNEL MOSFET».

Детали детали

Номер произв CJ502K
Описание P-CHANNEL MOSFET
Производители ZPSEMI
логотип ZPSEMI логотип 

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CJ502K Даташит, Описание, Даташиты
CJ502K
SOT-23 Plastic-Encapsulate MOSFETS
CJ502K P-CHANNEL MOSFET
DESCRIPTION
These miniature surface mount MOSFETs reduce power loss conserve
energy, making this device ideal for use in small power management circuitry.
SOT-23
FEATURE
z Energy efficient
z Miniature surface mount package saves board space
z With protection diode between gate and source
z Very fast switching
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z DCDC converters, power management in portable and batterypowered products such as computers,
printers, cellular and cordless telephones.
z Relay driver
z High-speed line driver
z High-side load switch
z Switching circuits
MARKING: 502K
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Drain-Source Voltage
Parameter
Symbol
VDS
Value
-50
Gate-Source Voltage
VGS ±20
Continuous Drain Current (note 1)
ID -0.18
Pulsed Drain Current @tp <10 μs
IDM -0.7
Power Dissipation (note 2)
Power Dissipation(note 1)
350
PD
420
Thermal Resistance from Junction to Ambient (note 2)
357
RθJA
Thermal Resistance from Junction to Ambient (note 1)
298
Junction Temperature
TJ 150
Storage Temperature
TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes , Duration
for 5 Seconds
TL
260
1. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2
2. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
V
V
A
A
mW
mW
/W
/W
www.zpsemi.com
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CJ502K Даташит, Описание, Даташиты
CJ502K
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
STATIC CHARACTERISTICS
Drain-source breakdown voltage
Symbol
V (BR)DSS
Zero gate voltage drain current
IDSS
Gate-body leakage current
Gate threshold voltage (note 1)
IGSS
VGS(th)
Drain-source on-resistance (note1)
RDS(on)
Forward transconductance (note 1)
gFS
DYNAMIC CHARACTERISTICS (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
SWITCHING CHARACTERISTICS (note 2)
Turn-on delay time
td(on)
Turn-on rise time
tr
Turn-off delay time
td(off)
Turn-off fall time
tf
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous current
IS
Pulsed current
ISM
Diode forward voltage (note 1)
VDS
Notes :
1. Pulse Test : Pulse Width300µs, Duty Cycle2%.
2. Guaranteed by design, not subject to producting.
Test Condition
VGS = 0V, ID =-250µA
VDS =-50V,VGS = 0V
VDS =-25V,VGS = 0V
VGS =±20V, VDS = 0V
VDS =VGS, ID =-250µA
VGS =-5V, ID =-0.1A
VGS =-10V, ID =-0.1A
VDS=-25V; ID=-100mA
VDS =-5V,VGS =0V,f =1MHz
VDD=-15V,
RL=50, ID =-2.5A
IS=-0.13A, VGS = 0V
Min Typ Max Unit
-50 V
-15 µA
-0.1 µA
±10 µA
-0.9 -2 V
10
8
50 mS
30 pF
10 pF
5 pF
2.5 ns
1 ns
16 ns
8 ns
-0.18
-0.7
-2.2
A
A
V
www.zpsemi.com
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Номер в каталогеОписаниеПроизводители
CJ502KP-Channel MOSFETJCET
JCET
CJ502KP-CHANNEL MOSFETZPSEMI
ZPSEMI

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