CJ2307 PDF даташит
Спецификация CJ2307 изготовлена «JCST» и имеет функцию, называемую «MOSFETS». |
|
Детали детали
Номер произв | CJ2307 |
Описание | MOSFETS |
Производители | JCST |
логотип |
3 Pages
No Preview Available ! |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2307 P-Channel 30-V(D-S) MOSFET
FEATURE
TrenchFET Power MOSFET
APPLICATIONS
Load Switch for Portable Devices
MARKING: S7
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a,b
Continuous Source-Drain Currenta,b
Power Dissipationa,b
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IS
PD
RθJA
TJ
Tstg
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Value
-30
±20
-2.7
-0.91
1.1
114
150
-55 ~+150
Unit
V
A
W
℃/W
℃
.
C,Nov,2013
No Preview Available ! |
Electrical characteristics ( Ta=25℃ unless otherwise noted)
Parameter
Symbol Test Condition
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistancec
Forward Transconductancec
Dynamicd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V (BR)DSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0V, ID =-250µA
VDS =VGS, ID =-250µA
VDS =0V, VGS =±20V
VDS =-30V, VGS =0V
VDS =-30V, VGS =0V, TJ=55℃
VGS =-4.5V, ID =-2.5A
VGS =-10V, ID =-3.5A
VDS =-10V, ID =-3.5A
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
VDS =-15V,VGS =0V,f =1MHz
VDS =-15V,VGS =-4.5V,
ID =-2.5A
f =1MHz
VDD=-15V,
RL=15Ω, ID =-1A,
VGEN=-4.5V,Rg=1Ω
Drain-source Body diode characteristics
Body Diode Voltage
VSD
IS=-0.75A, ,VGS =0
Notes:
a. t=5s.
b. Surface mounted on 1” ×1” FR4 board.
c. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.
d. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-30
V
-1 -3
±100 nA
-1
µA
-10
0.110 0.138
0.073 0.088
Ω
7S
340
67
51
4.1 6.2
1.3
1.8
10
40 60
40 60
20 40
17 30
pF
nC
Ω
ns
-0.8 -1.2
V
C,Nov,2013
No Preview Available ! |
Typical Characteristics
CJ2307
-20
T =25℃
a
Pulsed
-16
-12
-8
-4
Output Characteristics
V =-10V,-8V,-6V
GS
V =-4.5V
GS
V =-4.0V
GS
V =-3.5V
GS
V =-3.0V
GS
-0
-0 -1 -2 -3 -4
DRAIN TO SOURCE VOLTAGE V (V)
DS
300
T =25℃
a
Pulsed
250
R —— I
DS(ON)
D
-5
200
V =-4.5V
GS
150
V =-10V
100 GS
50
-0 -4 -8 -12 -16 -20
DRAIN CURRENT I (A)
D
-10
T =25℃
a
Pulsed
I —— V
S SD
-1
-10
T =25℃
a
Pulsed
-8
Transfer Characteristics
-6
-4
-2
-0
-0 -1 -2 -3 -4 -5
GATE TO SOURCE VOLTAGE V (V)
GS
R —— V
500
DS(ON)
GS
T =25℃
a
Pulsed
400
300
I =-3.5A
D
200
100
0
-0 -4 -8 -12 -16 -20
GATE TO SOURCE VOLTAGE V (V)
GS
-0.1
-0.01
-0.0
-0.3 -0.6 -0.9 -1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
-1.5
C,Nov,2013
Скачать PDF:
[ CJ2307.PDF Даташит ]
Номер в каталоге | Описание | Производители |
CJ2301 | MOSFETS | JCST |
CJ2301-HF | MOSFET ( Transistor ) | Comchip |
CJ2301B | P-Channel MOSFET | JCET |
CJ2301S | P-Channel MOSFET | JCET |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |