CJ2312 PDF даташит
Спецификация CJ2312 изготовлена «JCST» и имеет функцию, называемую «MOSFETS». |
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Детали детали
Номер произв | CJ2312 |
Описание | MOSFETS |
Производители | JCST |
логотип |
3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ2312 N-Channel 20-V(D-S) MOSFET
APPLICATIONS
z DC/DC Converters
z Load Switching for Portable Applications
SOT-23
1. GATE
2. SOURCE
3. DRAIN
MARKING: S12
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
t=5s
t=5s
Symbol
VDS
VGS
ID
IDM
IS
PD
RθJA
TJ
Tstg
Value
20
±8.0
5
20
1.04
0.35
357
150
-50 ~+150
Unit
V
A
W
℃/W
℃
B,Dec,2011
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Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static
Drain-source breakdown voltage
Gate-source leakage
Zero gate voltage drain current
Gate-source threshold voltage
Drain-source on-state resistancea
Forward tranconductancea
Dynamicb
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate resistance
Turn-on delay Time
Rise time
Turn-off Delay time
Fall yime
V(BR) DSS
IGSS
IDSS
VGS(th)
RDS(on)
gfS
VGS = 0V, ID =250µA
VDS =0V, VGS =±8V
VDS =20V, VGS =0V
VDS =VGS, ID =250µA
VGS =4.5V, ID =5.0A
VGS =2.5V, ID =4.7A
VGS =1.8V, ID =4.3A
VDS =10V, ID =5.0A
Ciss
Coss
Crss
Rg
td(on)
tr
td(off)
tf
VDS =10V,VGS =0V,f =1MHz
f =1MHz
VGEN=5V,VDD=10V,
ID =4A,RG=1Ω, RL=2.2Ω
Drain-source body diode characteristics
Forward diode voltage
VSD
VGS =0V,IS=4A
Notes :
a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%.
b. These parameters have no way to verify.
Min Typ Max Unit
20 V
±100 nA
1.0 µA
0.45 1.0 V
0.0318
0.0356 Ω
0.0414
6S
865
105
55
0.5 4.8
10
20
32
12
pF
Ω
ns
0.75 1.2
V
B,Dec,2011
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Typical Characteristics
CJ2312
Output Characteristics
16
VGS=2 thru 4.5
Ta=25 oC
12
VGS=1.5V
8
4
VGS=1V
0
012345
DRAIN TO SOURCE VOLTAGE VDS (V)
I
S
——
V
SD
20
10
1
0.1
0.01
1E-3
0.0
Ta=25 oC
0.2 0.4 0.6 0.8 1.0
SOURCE TO DRAIN VOLTAGE VSD (V)
1.2
R —— I
DS(ON)
D
60
Ta=25 oC
50
40 VGS=1.8V
30 VGS=2.5V
20 VGS=4.5V
10
0 2 4 6 8 10 12 14 16
DRAIN CURRENT ID (A)
Transfer Characteristics
10
8
6
4
2
Ta=25 oC
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
GATE TO SOURCE VOLTAGE VGS (V)
R ——
DS(ON)
V
GS
100
Ta=25 oC
80
60
40
ID=3.0A
20
02468
GATE TO SOURCE VOLTAGE VGS (V)
B,Dec,2011
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