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CJ3134K PDF даташит

Спецификация CJ3134K изготовлена ​​​​«JCST» и имеет функцию, называемую «MOSFETS».

Детали детали

Номер произв CJ3134K
Описание MOSFETS
Производители JCST
логотип JCST логотип 

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CJ3134K Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3134K N-Channel MOSFET
SOT-23
FEATURES
z Lead Free Product is Acquired
z Surface Mount Package
z N-Channel Switch with Low RDS(on)
z Operated at Low Logic Level Gate Drive
APPLICATIONS
z Load/Power Switching
z Interfacing Switching
z Battery Management for Ultra Small Portable Electronics
z Logic Level Shift
1. GATE
2. SOURCE
3. DRAIN
MARKING: 34K
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10μs)
Power Dissipation (note 1)
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8” duration for 10 s)
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
TSTG
TL
Value
20
±12
0.75
1.8
350
357
150
-55~+150
260
Unit
V
V
A
A
mW
/W
B,Dec,2013
B,Dec,2013









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CJ3134K Даташит, Описание, Даташиты
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS VDS =20V,VGS = 0V
Gate-body leakage current
IGSS VGS =±12V, VDS = 0V
Gate threshold voltage (note 2)
Drain-source on-resistance (note 2)
VGS(th)
RDS(on)
VDS =VGS, ID =250µA
VGS =4.5V, ID =0.65A
VGS =2.5V, ID =0.55A
VGS =1.8V, ID =0.45A
Forward transconductance (note 2)
gFS VDS =10V, ID =0.8A
Diode forward voltage
VSD IS=0.15A, VGS = 0V
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =16V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time (note 3)
td(on)
Turn-on rise time (note 3)
Turn-off delay time (note 3)
Turn-off fall time (note 3)
tr
td(off)
tf
VGS=4.5V,VDS=10V,
ID =500mA,RGEN=10
Notes :
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
Min Typ Max Unit
20 V
1 µA
±50 µA
0.35 1 V
380 m
450 m
800 m
1.6 S
1.2 V
79 120 pF
13 20 pF
9 15 pF
6.7 ns
4.8 ns
17.3 ns
7.4 ns
B,Dec,2013
B,Dec,2013









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CJ3134K Даташит, Описание, Даташиты
Typical Characteristics
CJ3134K
4
Pulsed
3
Output Characteristics
VGS=10.0V4.5V3.5V
VGS=2.5V
2
1 VGS=1.5V
0
0
1.0
0.8
0.6
123
DRAIN TO SOURCE VOLTAGE VDS (V)
4
R
DS(ON)
——
I
D
Ta=25
Pulsed
VGS=1.8V
0.4
0.2
0.0
0.3
VGS=2.5V
VGS=4.5V
0.6 0.9 1.2 1.5
DRAIN CURRENT ID (A)
1.8
2.1
10
Ta=25
Pulsed
1
I
S
——
V
SD
0.1
0.01
1E-3
1E-4
0.0
0.4 0.8 1.2 1.6 2.0
SOURCE TO DRAIN VOLTAGE VSD (V)
2.4
2.0
VDS=5.0V
Pulsed
1.6
1.2
Transfer Characteristics
Ta=25
Ta=100
0.8
0.4
0.0
0.0
0.5 1.0 1.5 2.0
GATE TO SOURCE VOLTAGE VGS (V)
2.5
800
700
600
500
400
300
200
100
1
R
DS(ON)
——
V
GS
Ta=25
Pulsed
ID=0.65A
234
GATE TO SOURCE VOLTAGE VGS (V)
5
Threshold Voltage
0.8
0.7
0.6 ID=250uA
0.5
0.4
0.3
25
50 75 100
JUNCTION TEMPERATURE TJ ()
125
B,Dec,2013










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