SD1002 PDF даташит
Спецификация SD1002 изготовлена «Taiwan Semiconductor» и имеет функцию, называемую «1.0A Surface Mount Schottky Barrier Rectifier». |
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Детали детали
Номер произв | SD1002 |
Описание | 1.0A Surface Mount Schottky Barrier Rectifier |
Производители | Taiwan Semiconductor |
логотип |
2 Pages
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SD1002 THRU SD1006
1.0A Surface Mount Schottky Barrier Rectifier
Voltage Range
20 to 60 Volts
450m Watts Power Dissipation
Features
Schottky barrier chip
Guard ring die construction for transient protection
Low power loss, high efficiency
High surge capability
High current capability and low forward voltage drop
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection application
Plastic material: UL flammability
Classification rating 94V-0
Mechanical Data
0.053(1.35)
Max.
SOD-123
0.022(0.55)
Typ. Min.
0.152(3.85)
0.140(3.55)
0.010(0.25)
Min.
0.112(2.85)
0.100(2.55)
Case: SOD-123, Plastic
Leads: Solderable per MIIL-STD-202,
Method 208
Polarity: Cathode Band
Marking: Date Code and Type Code or Date
Code only
Type Code: SL
Weight: 0.01 grams (approx.)
0.006(0.15)
Typ. Min.
0.067(1.70)
0.55(1.40)
0.004(0.10)
Max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol SD SD SD SD Units
1002 1003 1004 1006
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage, @ IR=1.0mA
DC Blocking Voltage
VRRM
VRWM
VR
20 30 40 60
V
RMS Reverse Voltage
VR(RMS) 28 42 V
Average Rectifier Output Current @ TL= 90OC
Io
1.0 A
Non-Repetitive Peak Forward Surge
Current 8.3ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC Method)
IFSM
25 A
Power Dissipation (Note 2)
Pd 450 mW
Typical Thermal Resistance Junction to Ambient
Air (Note 2)
RθJA
222 OC/W
Operating and Storage Temperature Range
Electrical Characteristics
TJ, TSTG
-65 to + 125
OC
Maximum Forward Voltage (Note 1) IF=1.0A
VF
0.45 0.50 0.55 0.70
V
Typ Max
Reverse Leakage Current (Note 1)
VR=40V, TA=25℃
VR=40V, TA=100℃
VR=4V, TA=25℃
VR=4V, TA=100℃
VR=6V, TA=25℃
VR=6V, TA=100℃
Junction Capacitance VR=4V, f=1.0MHz
IR
Cj
1.0 1.0
mA
10
_ 10 50
mA
uA
12
mA
15 75
uA
1.5 3
mA
_ 110 _ _ pF
Notes: 1. Pulse Test: Pulse width = 300 us, Duty Cycle≦2%.
2. Valid Provided that Leads are Kept at Ambient Temperature at a Distance of 9.5mm from
the case.
- 46 -
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RATINGS AND CHARACTERISTIC CURVES (SD1002THRU SD1006 )
FIG.1- FORWARD CURRENT DERATING CURVE
1.0
FIG.2-TYPICAL FORWARD CHARACTERISTICS
5
0.8 4
0.6 3
0.4
0.2
Single Phase Half Wave
60Hz Resistive or Inductive Load
0
10
40 60 80 100 120 140
LEAD TEMPERATURE. (OC)
FIG.3-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
25
8.3ms Single Half Sine-Wave
20 JEDEC Method
2
Tj= 25OC
1 Tj=125OC
Pulse Width-300ms
2% Duty Cycle
0
0 0.5
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.4- TYPICAL JUNCTION CAPACITANCE
1.0
1000
Tj=25 C
f =1MHz
15
100
10
5
0
1 10
NUMBER OF CYCLES AT 60 Hz
FIG.5- TYPICAL SAFE OPERATING AREA
150
R( )JA=300OC /W
Note 1
125
100
75
50
10
100 0.1 1.0 10 100
REVERSE VOLTAGE. (V)
FIG.6- TYPICAL REVERSE CHARACTERISTICS
10.0
1.0
Tj=75 C
0.1
Tj=25 C
0.01
25
1
10
REVERSE VOLTAGE. (V)
20 30 40 50 60
0.001
20 25 30 35 40 45 50 55 60 65
RATED PEAK REVERSE VOLTAGE. (V)
- 47 -
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DataSheet26.com | 2020 | Контакты | Поиск |