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PDF NCV7708F Data sheet ( Hoja de datos )
| Número de pieza | NCV7708F | |
| Descripción | Double Hex Driver | |
| Fabricantes | ON Semiconductor | |
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NCV7708F
Double Hex Driver
The NCV7708F is a fully protected Hex Half Bridge Driver
designed specifically for automotive and industrial motion control
applications. The six low and high side drivers are freely configurable
and can be controlled separately. This allows for high side, low side,
and H−Bridge control. H−Bridge control provides forward, reverse,
brake, and high impedance states. The drivers are controlled via a
standard SPI interface.
Features
• Ultra Low Quiescent Current Sleep Mode
• Six Independent High−Side and Six independent Low−Side Drivers
• Integrated Freewheeling Protection (LS and HS)
• Internal Upper and Lower Clamp Diodes
• Configurable as H−Bridge Drivers
• RDS(on) = 0.6 W (typ)
• 5 MHz SPI Control
• SPI Valid Frame Detection
• Compliance with 5 V and 3.3 V Systems
• Overvoltage Lockout
• Undervoltage Lockout
• Fault Reporting
• Current Limit
• Overtemperature Protection
• Internally Fused Lead in SOIC−28
• SSOP−24 NB EPAD
• These are Pb−Free Devices
Typical Applications
• Automotive
• Industrial
• DC Motor Management
www.onsemi.com
MARKING
DIAGRAMS
SOIC−28
DW SUFFIX
CASE 751F
NCV7708F
AWLYYWWG
SSOP−24 NB EP
DQ SUFFIX
CASE 940AK
NCV7708F
AWLYYWWG
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package Shipping†
NCV7708FDWR2G* SOIC−28W
1000 /
(Pb−Free) Tape & Reel
NCV7708FDQR2G
SSOP−24N
1000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Contact your local sales representative for the
NCV7708F device availability in SOIC−28 package.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 2
1
Publication Order Number:
NCV7708F/D
1 page  
NCV7708F
RECOMMENDED OPERATING CONDITIONS
Value
Rating
Symbol
Min
Max Unit
Digital Supply Input Voltage (VCC)
VCCmax
3.15
5.25 V
Battery Supply Input Voltage (VS)
VSmax
5.5
28 V
DC Output Current (I(OUTLx), I(OUTHx))
DCmax
−
0.5 A
Junction Temperature
TJ −40 150 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
(−40°C < TJ < 150°C, 5.5 V < VSx < 40 V, 3.15 V < VCC < 5.25 V, EN = VCC, unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
GENERAL
Supply Current (VS1 + VS2)
Sleep Mode (Note 5)
Ivs_sleep
VS1 = VS2 = 13.2 V,
VCC = CSB = 5 V,
EN = SI = SCLK = 0 V
(−40°C to 85°C)
− 1.0 2.5 mA
Supply Current (VS1)
Active Mode
Ivs1_act
EN = VCC,
5.5 V < VSx < 35 V
No Load
− 1.25 2.5 mA
Supply Current (VCC) − Sleep Mode (Note 5)
Ivcc_sleep
CSB = VCC,
EN = SI = SCLK = 0 V
(−40°C to 85°C)
− 1.0 2.5 mA
Supply Current (VCC) − Active Mode
Ivcc_act
EN = CSB = VCC,
SI = SCLK = 0 V
− 1.5 3.0 mA
Supply Current (VS2)
Active Mode
Ivs2_act
EN = VCC,
5.5 V < VSx < 35 V
No Load
− 1.25 2.5 mA
VCC Power−On−Reset Threshold
VSx Undervoltage Detection Threshold
VSx Undervoltage Detection Hysteresis
VSx Overvoltage Detection Threshold
VSx Overvoltage Detection Hysteresis
Thermal Warning (Note 6)
Thermal Warning Hysteresis (Note 6)
Thermal Shutdown (Note 6)
Ratio of Thermal Shutdown to Thermal
Warning (Note 6)
VCCpor
VSuv
VSuv_hys
VSov
VSov_hys
Ttw
Ttw_hys
Ttsd
Ttsd/Ttw
VSx decreasing
VSx increasing
− 2.55 2.9 V
3.7 4.1 4.5 V
100 365 450 mV
33 36.5 40.0 V
1 2.5 4.0 V
120 140 170 °C
− 20 − °C
155 175 195 °C
1.05 1.20 − −
OUTPUTS
Output High RDS(on) (source and sink)
RDSon_src
RDSon_snk
Iout = −500 mA
25°C
−40°C < TJ < 150°C
W
− 0.6 1.3
− − 1.7
Source Leakage Current
Isrc OUTH(1−6) = 0 V,
Vsx = 40 V, VCC = 5 V
OUTH(1−6) = 0 V,
Vsx = 13.2 V, VCC = 5V
−5.0
−1.0
mA
−−
−−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. For temperatures above 85°C, refer to graphs for VSx and VCC Sleep Current vs. Temperature on page 17.
6. Thermal characteristics are not subject to production test.
7. Refer to “Typical High−Side Negative Clamp Voltage” graph on page 17.
8. Current limit is active with and without overcurrent detection.
9. Not production tested.
www.onsemi.com
5
5 Page 
NCV7708F
CHARACTERISTIC TIMING DIAGRAMS
LS Turn OFF
HS Turn ON
TlsTr
TlsOff
10%
TlsOffHsOn
90%
50%
10%
90%
50%
ThsTr
CSB
50%
LS Turn On
HS Turn Off
ThsOn
90%
TlsOn
90%
ThsTf
ThsOffLsOn
50%
10%
TlsTf
50%
10%
CSB
50%
ThsOff
Figure 5. Detailed Driver Timing
www.onsemi.com
11
11 Page | ||
| Páginas | Total 22 Páginas | |
| PDF Descargar | [ Datasheet NCV7708F.PDF ] | |
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