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7N60A PDF даташит

Спецификация 7N60A изготовлена ​​​​«nELL» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor».

Детали детали

Номер произв 7N60A
Описание N-Channel Power MOSFET / Transistor
Производители nELL
логотип nELL логотип 

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7N60A Даташит, Описание, Даташиты
SEMICONDUCTOR
7N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(7A, 600Volts)
DESCRIPTION
The Nell 7N60 is a three-terminal silicon
device with current conduction capability of 7A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 600V ,and max.
threshold voltage of 4 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 1.2Ω @ VGS = 10V
Ultra low gate charge(38nC max.)
Low reverse transfer capacitance
(CRSS = 16pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
7
VDSS (V)
600
RDS(ON) (Ω)
1.2 @ VGS = 10V
QG(nC) max.
38
D
GDS
TO-220AB
(7N60A)
D
G
S
TO-263(D2PAK)
(7N60H)
GDS
TO-220F
(7N60AF)
D (Drain)
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=7A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=7A, L=19.5mH
dv/dt
Peak diode recovery dv/dt(Note 3)
PD Total power dissipation
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 7A, VDD = 50V, L = 19.5mH, RGS = 25Ω, starting TJ=25°C.
3.ISD ≤ 7A, di/dt ≤ 200A/µs, VDD V(BR)DSS, starting TJ=25°C.
TO-220AB/TO-263
TC=25°C
TO-220F
1.6mm from case
www.nellsemi.com
Page 1 of 8
VALUE
600
600
±30
7
4.3
28
7
14
500
4.5
140
48
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
V /ns
W
ºC
lbf.in (N.m)









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7N60A Даташит, Описание, Даташиты
SEMICONDUCTOR
7N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB/TO-263
TO-220F
TO-220AB/TO-263
TO-220F
Min.
Typ.
Max.
0.85
2.5
62.5
62.5
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA ,VGS = 0V
600
▲ ▲V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS=VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID =3.5A, VGS = 10V
VGS(TH)
CISS
Gate threshold voltage
Input capacitance
VGS=VDS, ID=250μA
2
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V, lD = 7A,
RGS = 25Ω (Note 1, 2)
tf Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V, ID = 7A
(Note 1, 2)
Typ.
0.53
0.95
16
Max. UNIT
V
V/ºC
10
μA
100
100
-100
nA
1.2
4
1400
180
Ω
V
pF
21
70
170
ns
140
130
28 38
7 nC
14
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD Diode forward voltage
ISD = 7A, VGS = 0V
1.4 V
Is (IsD)
Continuous source to drain current
ISM Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
7
A
28
trr Reverse recovery time
Qrr Reverse recovery charge
ISD = 7A, VGS = 0V,
dIF/dt = 100A/µs
S (Source)
320 ns
2.4 µC
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
www.nellsemi.com
Page 2 of 8









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7N60A Даташит, Описание, Даташиты
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
Current rating, ID
7 = 7A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
H = TO-263(D²PAK)
7N60 Series RRooHHSS
Nell High Power Products
7 N 60 A
Fig.1 On-State characteristics
103
100
VGS
Top: 12V
10V
8V
7V
6.5V
6V
5.5V
Bottorm: 5 V
10-1
101
*Notes:
1.250µs Pulse test
2.Tc=25°C
102 103
Drain-to-Source voltage, VDS(V)
Fig.2 Transfer characteristics
101
150°C
100
25°C
10-1
2
4
-55°C
6
*Notes:
1.VDS=50V
2.250µs Pulse test
8 10
Gate-Source voltage, VGS (V)
Fig.3 On-resistance variation vs. drain
current and gate voltage
3.5
3
VGS=10V
2.5
2
VGS=20V
1.5
1.0
0.5
0
*Note:TJ=25°C
5 10 15 20
Drain current, ID (A)
Fig.4 Body diode forward voltage variation
with source current and temperature
101
100
10-1
0.2
150°C 25°C
*Notes:
1.VGS=0V
2.250μs Pulse test
0.4 0.6 0.8 1.0 1.2 1.4
Source-drain voltage, VSD(V)
www.nellsemi.com
Page 3 of 8










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